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Register a new userSpin-orbit Hanle effect in high-mobility quantum wells
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We study the depolarization of optically oriented electrons in quantum wells subjected to an in-plane magnetic field and show that the Hanle curve drastically depends on the carrier mobility. In low-mobility structures, the Hanle curve is described by a Lorentzian with the width determined by the effective g-factor and the spin lifetime. In contrast, the magnetic field dependence of spin polarization in high-mobility quantum wells is nonmonotonic: The spin polarization rises with the magnetic field induction at small fields, reaches maximum and then decreases. We show that the position of the Hanle curve maximum can be used to directly measure the spin-orbit Rashba/Dresselhaus magnetic field.
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Using $vec{k}$$cdot$$vec{p}$ theory, we derive an effective four band model describing the physics of the typical two-dimensional topological insulator (HgTe/CdTe quantum well) in the presence of out-of-plane in z-direction inversion breaking and in-plane confining potentials. We find that up to third order in perturbation theory, only the inversion breaking potential generates new elements to the four band Hamiltonian that are off-diagonal in spin space. When this new effective Hamiltonian is folded into an effective two band model for the conduction (electron) or valence (heavy hole) bands, two competing terms appear: (1) a Rashba spin-orbit interaction originating from inversion breaking potential in z-direction and (2) an in-plane Pauli term as a consequence of the in-plane confining potential. Spin transport in the conduction band is further analysed within the Landauer-Buttiker formalism. We find that for asymmetrically doped HgTe quantum wells, the behaviour of the spin-Hall conductance is dominated by the Rashba term.
Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate SOC and intrinsic spin-splitting in atomically thin InSe, which can be modified over an unprecedentedly large range. From quantum oscillations, we establish that the SOC parameter alpha is thickness-dependent; it can be continuously modulated over a wide range by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Surprisingly, alpha could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.
We measure simultaneously the in-plane electron g-factor and spin relaxation rate in a series of undoped inversion-asymmetric (001)-oriented GaAs/AlGaAs quantum wells by spin-quantum beat spectroscopy. In combination the two quantities reveal the absolute values of both the Rashba and the Dresselhaus coefficients and prove that the Rashba coefficient can be negligibly small despite huge conduction band potential gradients which break the inversion symmetry. The negligible Rashba coefficient is a consequence of the isomorphism of conduction and valence band potentials in quantum systems where the asymmetry is solely produced by alloy variations.
The quantum Hall effect, with a Berrys phase of $pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $sim$ 20,000 cm$^2$/V$cdot$s at 4 K and ~15,000 cm$^2$/V$cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO$_2$ and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.
We present a theoretical study of the anisotropy of the spin relaxation and decoherence in typical quantum wells with an arbitrary magnetic field. In such systems, the orientation of the magnetic field relative to the main crystallographic directions is crucial, owing to the lack of spin-rotation symmetry. For typical high mobility samples, relaxation anisotropies in the motional narrowing limit owing to the interplay of Rashba and Dresselhaus spin orbit coupling are calculated. We also include the effect of the cubic-in-momentum terms. Although commonly ignored in literature, the latter were experimentally evidenced by the observation of strong anisotropy in spin decoherence measurements by different experimental groups and has long remained unexplained.
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