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Register a new userGap opening in topological-defect lattices in graphene
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Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems of very low formation energies with respect to a pristine graphene sheet. Corrugation induced by the topological defects further reduces the energy and tends to reduce the density of states at the Fermi level, to widen the gaps, or even to lead to gap opening in some cases where the parent planar geometry is metallic.
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We have measured a strong increase of the low-temperature resistivity $rho_{xx}$ and a zero-value plateau in the Hall conductivity $sigma_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in $rho_{xx}$ and the anomalous $ u=0$ plateau in $sigma_{xy}$ in terms of coexisting electrons and holes in the same spin-split zero-energy Landau level.
Two-dimensional topological insulators (TIs) host gapless helical edge states that are predicted to support a quantized two-terminal conductance. Quantization is protected by time-reversal symmetry, which forbids elastic backscattering. Paradoxically, the current-carrying state itself breaks the time-reversal symmetry that protects it. Here we show that the combination of electron-electron interactions and momentum-dependent spin polarization in helical edge states gives rise to feedback through which an applied current opens a gap in the edge state dispersion, thereby breaking the protection against elastic backscattering. Current-induced gap opening is manifested via a nonlinear contribution to the systems $I-V$ characteristic, which persists down to zero temperature. We discuss prospects for realizations in recently discovered large bulk band gap TIs, and an analogous current-induced gap opening mechanism for the surface states of three-dimensional TIs.
The phase diagram of isotropically expanded graphene cannot be correctly predicted by ignoring either electron correlations, or mobile carbons, or the effect of applied stress, as was done so far. We calculate the ground state enthalpy (not just energy) of strained graphene by an accurate off-lattice Quantum Monte Carlo (QMC) correlated ansatz of great variational flexibility. Following undistorted semimetallic graphene (SEM) at low strain, multi-determinant Heitler-London correlations stabilize between $simeq$8.5% and $simeq$15% strain an insulating Kekule-like dimerized (DIM) state. Closer to a crystallized resonating-valence bond than to a Peierls state, the DIM state prevails over the competing antiferromagnetic insulating (AFI) state favored by density-functional calculations which we conduct in parallel. The DIM stressed graphene insulator, whose gap is predicted to grow in excess of 1 eV before failure near 15% strain, is topological in nature, implying under certain conditions 1D metallic interface states lying in the bulk energy gap.
For graphene to be used in semiconductor applications, a wide energy gap of at least 0.5 eV at the Dirac energy must be opened without the introduction of atomic defects. However, such a wide energy gap has not been realized in graphene, except in the cases of narrow, chemically terminated graphene nanostructures with inevitable edge defects. Here, we demonstrated that a wide energy gap of 0.74 eV, which is larger than that of germanium, could be opened in uniform monolayer graphene without the introduction of atomic defects into graphene. The wide energy gap was opened through the adsorption of self-assembled twisted sodium nanostrips. Furthermore, the energy gap was reversibly controllable through the alternate adsorption of sodium and oxygen. The opening of such a wide energy gap with minimal degradation of mobility could improve the applicability of graphene in semiconductor devices, which would result in a major advancement in graphene technology.
Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is its lacking of an energy gap in the electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphenes electronic spectra, they all require complex engineering of the graphene layer. Here we show that when graphene is epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe our results highlight a promising direction for band gap engineering of graphene.
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