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Register a new userGap opening in the zeroth Landau level of graphene
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We have measured a strong increase of the low-temperature resistivity $rho_{xx}$ and a zero-value plateau in the Hall conductivity $sigma_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in $rho_{xx}$ and the anomalous $ u=0$ plateau in $sigma_{xy}$ in terms of coexisting electrons and holes in the same spin-split zero-energy Landau level.
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We identify an unusual mechanism for quantum oscillations in nodal semimetals, driven by a single pair of Landau levels periodically closing their gap at the Fermi energy as a magnetic field is varied. These `zero Landau level quantum oscillations (ZQOs) appear in the nodal limit where the zero-field Fermi volume vanishes, and have distinctive periodicity and temperature dependence. We link the Landau spectrum of a two-dimensional (2D) nodal semimetal to the Rabi model, and show by exact solution that across the entire Landau fan, pairs of opposite-parity Landau levels are intertwined in a `serpentine manner. We propose 2D surfaces of topological crystalline insulators as natural settings for ZQOs, and comment on implications for anomaly physics in 3D nodal semimetals.
Non-diagonal (bond) disorder in graphene broadens Landau levels (LLs) in the same way as random potential. The exception is the zeroth LL, $n=0$, which is robust to the bond disorder, since it does not mix different $n=0$ states within a given valley. The mechanism of broadening of the $n=0$ LL is the inter-valley scattering. Several numerical simulations of graphene with bond disorder had established that $n=0$ LL is not only anomalously narrow but also that its shape is very peculiar with three maxima, one at zero energy, $E=0$, and two others at finite energies $pm E$. We study theoretically the structure of the states in $n=0$ LL in the presence of bond disorder. Adopting the assumption that the bond disorder is strongly anisotropic, namely, that one type of bonds is perturbed much stronger than other two, allowed us to get an analytic expression for the density of states which agrees with numerical simulations remarkably well. On the qualitative level, our key finding is that delocalization of $E=0$ state has a dramatic back effect on the density of states near $E=0$. The origin of this unusual behavior is the strong correlation of eigenstates in different valleys.
The propagation of Dirac fermions in graphene through a long-period periodic potential would result in a band folding together with the emergence of a series of cloned Dirac points (DPs). In highly aligned graphene/hexagonal boron nitride (G/hBN) heterostructures, the lattice mismatch between the two atomic crystals generates a unique kind of periodic structure known as a moire superlattice. Of particular interests is the emergent phenomena related to the reconstructed band-structure of graphene, such as the Hofstadter butterfly, topological currents, gate dependent pseudospin mixing, and ballistic miniband conduction. However, most studies so far have been limited to the lower-order minibands, e.g. the 1st and 2nd minibands counted from charge neutrality, and consequently the fundamental nature of the reconstructed higher-order miniband spectra still remains largely unknown. Here we report on probing the higher-order minibands of precisely aligned graphene moire superlattices by transport spectroscopy. Using dual electrostatic gating, the edges of these high-order minibands, i.e. the 3rd and 4th minibands, can be reached. Interestingly, we have observed interband Landau level (LL) crossinginducing gap closures in a multiband magneto-transport regime, which originates from band overlap between the 2nd and 3rd minibands. As observed high-order minibands and LL reconstruction qualitatively match our simulated results. Our findings highlight the synergistic effect of minibands in transport, thus presenting a new opportunity for graphene electronic devices.
Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems of very low formation energies with respect to a pristine graphene sheet. Corrugation induced by the topological defects further reduces the energy and tends to reduce the density of states at the Fermi level, to widen the gaps, or even to lead to gap opening in some cases where the parent planar geometry is metallic.
Van der Waals heterostructures formed by assembling different two-dimensional atomic crystals into stacks can lead to many new phenomena and device functionalities. In particular, graphene/boron-nitride heterostructures have emerged as a very promising system for band engineering of graphene. However, the intrinsic value and origin of the bandgap in such heterostructures remain unresolved. Here we report the observation of an intrinsic bandgap in epitaxial graphene/boron-nitride heterostructures with zero crystallographic alignment angle. Magneto-optical spectroscopy provides a direct probe of the Landau level transitions in this system and reveals a bandgap of ~ 38 meV (440 K). Moreover, the Landau level transitions are characterized by effective Fermi velocities with a critical dependence on specific transitions and magnetic field. These findings highlight the important role of many body interactions in determining the fundamental properties of graphene heterostructures.
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