The amount of rippling in graphene sheets is related to the interactions with the substrate or with the suspending structure. Here, we report on an irreversibility in the response to forces that act on suspended graphene sheets. This may explain why one always observes a ripple structure on suspended graphene. We show that a compression-relaxation mechanism produces static ripples on graphene sheets and determine a peculiar temperature $T_c$, such that for $T<T_c$ the free-energy of the rippled graphene is smaller than that of roughened graphene. We also show that $T_c$ depends on the structural parameters and increases with increasing sample size.
The Casimir force between two infinitely thin parallel sheets in a setting of $N$ such sheets is found. The finite two-dimensional conductivities, which describe the dispersive and absorptive properties of each sheet, are taken into account, whereupon the theory is applied to interacting graphenes. By exploring similarities with in-plane optical spectra for graphite, the conductivity of graphene is modeled as a combination of Lorentz type oscillators. We find that the graphene transparency and the existence of a universal constant conductivity $e^2/(4hbar)$ result in graphene/graphene Casimir interaction at large separations to have the same distance dependence as the one for perfect conductors but with much smaller magnitude.
We have measured the impact of atomic hydrogen adsorption on the electronic transport properties of graphene sheets as a function of hydrogen coverage and initial, pre-hydrogenation field-effect mobility. Our results are compatible with hydrogen adsorbates inducing intervalley mixing by exerting a short-range scattering potential. The saturation coverages for different devices are found to be proportional to their initial mobility, indicating that the number of native scatterers is proportional to the saturation coverage of hydrogen. By extrapolating this proportionality, we show that the field-effect mobility can reach $1.5 times 10^4$ cm$^2$/V sec in the absence of the hydrogen-adsorbing sites. This affinity to hydrogen is the signature of the most dominant type of native scatterers in graphene-based field-effect transistors on SiO$_2$.
We investigate the size scaling of the conductance of surface disordered graphene sheets of width W and length L. Metallic leads are attached to the sample ends across its width. At E ~ 0, the conductance scales with the system size as follows: i) For constant W/L, it remains constant as size is increased, at a value which depends almost lineally on that ratio; this scaling allows the definition of a conductivity value that results similar to the experimental one. ii) For fixed width, the conductance decreases exponentially with length L, both for ordered and disordered samples. Disorder reduces the exponential decay, leading to a higher conductance. iii) For constant length, conductance increases linearly with width W, a result that is exclusively due to the tails of the states of the metallic wide contact. iv) The average conductance does not show an appreciable dependence on magnetic field. Away from E = 0, the conductance shows the behavior expected in two-dimensional systems with surface disorder, i.e., ballistic transport.
We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic and spectroscopic techniques and by electrical transport measurements. As substrates we successfully use Cu(111) single crystals and the technologically relevant polycrystalline copper foils.
At low energies, electrons in doped graphene sheets are described by a massless Dirac fermion Hamiltonian. In this work we present a semi-analytical expression for the dynamical density-density linear-response function of noninteracting massless Dirac fermions (the so-called Lindhard function) at finite temperature. This result is crucial to describe finite-temperature screening of interacting massless Dirac fermions within the Random Phase Approximation. In particular, we use it to make quantitative predictions for the specific heat and the compressibility of doped graphene sheets. We find that, at low temperatures, the specific heat has the usual normal-Fermi-liquid linear-in-temperature behavior, with a slope that is solely controlled by the renormalized quasiparticle velocity.