No Arabic abstract
Ultrathin amorphous Bi films, patterned with a nano-honeycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs of electrons between localized states. Here we show that the magnetoresistance of this Cooper pair insulator phase is positive and grows exponentially with decreasing temperature, for temperatures well below the pair formation temperature. It peaks at a field estimated to be sufficient to break the pairs and then decreases monotonically into a regime in which the film resistance assumes the temperature dependence appropriate for weakly localized single electron transport. We discuss how these results support proposals that the large MR peaks in other unpatterned, ultrathin film systems disclose a Cooper Pair Insulator phase and provide new insight into the Cooper pair localization.
We conducted a systematic study of the disorder dependence of the termination of superconductivity, at high magnetic fields (B), of amorphous indium oxide films. Our lower disorder films show conventional behavior where superconductivity is terminated with a transition to a metallic state at a well-defined critical field, Bc2. Our higher disorder samples undergo a B-induced transition into a strongly insulating state, which terminates at higher Bs forming an insulating peak. We demonstrate that the B terminating this peak coincides with Bc2 of the lower disorder samples. Additionally we show that, beyond this field, these samples enter a different insulating state in which the magnetic field dependence of the resistance is weak. These results provide crucial evidence for the importance of Cooper-pairing in the insulating peak regime.
A theory of the fluctuation-induced Nernst effect is developed for arbitrary magnetic fields and temperatures beyond the upper critical field line in a two-dimensional superconductor. First, we derive a simple phenomenological formula for the Nernst coefficient, which naturally explains the giant Nernst signal due to fluctuating Cooper pairs. The latter is shown to be large even far from the transition and may exceed by orders of magnitude the Fermi liquid terms. We also present a complete microscopic calculation (which includes quantum fluctuations) of the Nernst coefficient and give its asymptotic dependencies in various regions on the phase diagram. It is argued that the magnitude and the behavior of the Nernst signal observed experimentally in disordered superconducting films can be well-understood on the basis of the superconducting fluctuation theory.
Unusual transport properties of superconducting (SC) materials, such as the under doped cuprates, low dimensional superconductors in strong magnetic fields, and insulating films near the Insulator Superconductor Transition (IST), have been attributed to the formation of inhomogeneous phases. Difficulty correlating the behaviors with observations of the inhomogeneities make these connections uncertain. Of primary interest here are proposals that insulating films near the IST, which show an activated resistance and giant positive magnetoresistance, contain islands of Cooper Pairs (CPs). Here we present evidence that these types of inhomogeneities are essential to such an insulating phase in amorphous Bi (a-Bi) films deposited on substrates patterned with nanometer-sized holes. The patterning induces film thickness variations, and corresponding coupling constant variations, that transform the composition of the insulator from localized electrons to CPs. Analyses near the thickness-tuned ISTs of films on nine different substrates show that weak links between SC islands dominate the transport. In particular, the ISTs all occur when the link resistance approaches the resistance quantum for pairs. These observations lead to a detailed picture of CPs localized by spatial variations of the superconducting coupling constant.
This paper is devoted to an analysis of the experiment by Nakamura {it et al.} (Nature {bf 398}, 786 (1999)) on the quantum state control in Josephson junctions devices. By considering the relevant processes involved in the detection of the charge state of the box and a realistic description of the gate pulse we are able to analyze some aspects of the experiment (like the amplitude of the measurement current) in a quantitative way.
We report here the magneto-transport properties of the newly synthesized Heusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structure belonging to Pm-3m space group. The sample is found to be paramagnetic down to 2 K with metallic character. On application of magnetic field, a significantly large increase in resistivity is observed which corresponds to magnetoresistance as high as 112% at 150 kOe of field at the lowest temperature. Most remarkably, the sample shows negative temperature coefficient of resistivity below about 50 K under the application of field gretare than or equal to 80 kOe, signifying a field-induced metal to `insulating transition. The observed magnetoresistance follows Kohlers rule below 20 K indicating the validity of the semiclassical model of electronic transport in metal with a single relaxation time. A multi-band model for electronic transport, originally proposed for semimetals, is found to be appropriate to describe the magneto-transport behavior of the sample.