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Register a new userCooper pair insulator in amorphous films induced by nanometer-scale thickness variations
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Unusual transport properties of superconducting (SC) materials, such as the under doped cuprates, low dimensional superconductors in strong magnetic fields, and insulating films near the Insulator Superconductor Transition (IST), have been attributed to the formation of inhomogeneous phases. Difficulty correlating the behaviors with observations of the inhomogeneities make these connections uncertain. Of primary interest here are proposals that insulating films near the IST, which show an activated resistance and giant positive magnetoresistance, contain islands of Cooper Pairs (CPs). Here we present evidence that these types of inhomogeneities are essential to such an insulating phase in amorphous Bi (a-Bi) films deposited on substrates patterned with nanometer-sized holes. The patterning induces film thickness variations, and corresponding coupling constant variations, that transform the composition of the insulator from localized electrons to CPs. Analyses near the thickness-tuned ISTs of films on nine different substrates show that weak links between SC islands dominate the transport. In particular, the ISTs all occur when the link resistance approaches the resistance quantum for pairs. These observations lead to a detailed picture of CPs localized by spatial variations of the superconducting coupling constant.
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A Cooper pair insulator (CPI) phase emerges near the superconductor-insulator transitions of a number of strongly-disordered thin film systems. Much recent study has focused on a mechanism driving the underlying Cooper pair localization. We present data showing that a CPI phase develops in amorphous Pb$_{0.9}$Bi$_{0.1}$ films deposited onto nano-porous anodized aluminum oxide surfaces just as it has been shown to develop for a-Bi films. This result confirms the assertion that the CPI phase emerges due to the structure of the substrate. It supports the picture that nanoscale film thickness variations induced by the substrate drive the localization. Moreover, it implies that the CPI phase can be induced in any superconducting material that can be deposited onto this surface.
We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of spectral weight from high energy Hubbard band to low energy in-gap state creates a broad peak and nearly V-shaped gap around the Fermi level. The peak position shows a sudden drop at distance around 4 a0 and then remains almost constant. The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu lattice. These results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates.
A microscopic theory for the spin triplet Cooper pairing in non-centrosymmetric superconductors like CePt_3Si and CeTSi_3 (T=Rh, Ir) is presented. The lack of inversion symmetry leads to new anomalous spin fluctuations which stabilize the triplet part in addition to the singlet part originating from the centrosymmetric spin fluctuations. It is shown that both parts have similar nontrivial momentum dependence of A_1 type. Therefore the mixed singlet-triplet gap function has accidental line nodes on both Fermi surface sheets which are stable as function of temperature. This gap function explains the salient features of CePt_3Si and CeTSi_3 superconductors.
We conducted a systematic study of the disorder dependence of the termination of superconductivity, at high magnetic fields (B), of amorphous indium oxide films. Our lower disorder films show conventional behavior where superconductivity is terminated with a transition to a metallic state at a well-defined critical field, Bc2. Our higher disorder samples undergo a B-induced transition into a strongly insulating state, which terminates at higher Bs forming an insulating peak. We demonstrate that the B terminating this peak coincides with Bc2 of the lower disorder samples. Additionally we show that, beyond this field, these samples enter a different insulating state in which the magnetic field dependence of the resistance is weak. These results provide crucial evidence for the importance of Cooper-pairing in the insulating peak regime.
Ultrathin amorphous Bi films, patterned with a nano-honeycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs of electrons between localized states. Here we show that the magnetoresistance of this Cooper pair insulator phase is positive and grows exponentially with decreasing temperature, for temperatures well below the pair formation temperature. It peaks at a field estimated to be sufficient to break the pairs and then decreases monotonically into a regime in which the film resistance assumes the temperature dependence appropriate for weakly localized single electron transport. We discuss how these results support proposals that the large MR peaks in other unpatterned, ultrathin film systems disclose a Cooper Pair Insulator phase and provide new insight into the Cooper pair localization.
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