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Register a new userSimulation of the Avalanche Process in the G-APD and Circuitry Analysis of the SiPM
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The discrete modeling of the Geiger-mode APD is considered. Results of modeling and experimental measurements with the SiPM show that the known formula for the charge of the avalanche pulse Q=dU*Cd underestimates its value. In addition, it is seen from the dynamic of the avalanche multiplication that the resistor Rq in photodiode, usually called a quenching resistor, in reality fulfills only the restoring function. The SiPM restoring time, taken into account the number of pixel N and the load resistance R, is T=Cd*(Rq+NR).
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Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-generated carriers (electrons or holes) via a Geiger-mode avalanche. The Photon Detection Efficiency (PDE) is the combined probability that a photon is absorbed in the active volume of the device with a subsequently triggered avalanche. Absorption and avalanche triggering probabilities are correlated since the latter probability depends on where the photon is absorbed. In this paper, we introduce a physics motivated parameterization of the avalanche triggering probability that describes the PDE of a SiPM as a function of its reverse bias voltage, at different wavelengths. This parameterization is based on the fact that in p-on-n SiPMs the induced avalanches are electron-driven in the ultra-violet and near-ultra-violet ranges, while they become increasingly hole-driven towards the near-infra-red range. The model has been successfully applied to characterize two Hamamatsu MPPCs and one FBK SiPM, and it can be extended to other SiPMs. Furthermore, this model provides key insight on the electric field structure within SiPMs, which can explain the limitation of existing devices and be used to optimize the performance of future SiPMs.
In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark condition, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM, and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC). Spectral measurements of their light emission were taken with varying over-voltage in the wavelength range of 450--1020,nm. For the FBK VUV-HD3, at an over-voltage of $12.1pm1.0$,V, we measure a secondary photon yield (number of photons ($gamma$) emitted per charge carrier ($e^{-}$)) of $(4.04pm0.02)times 10^{-6}$ $gamma/e^{-}$. The emission spectrum of the FBK VUV-HD3 contains an interference pattern consistent with thin-film interference. Additionally, emission microscopy images (EMMIs) of the FBK VUV-HD3 show a small number of highly localized regions with increased light intensity (hotspots) randomly distributed over the SiPM surface area. For the HPK VUV4 MPPC, at an over-voltage of $10.7pm1.0$,V, we measure a secondary photon yield of $(8.71pm0.04)times 10^{-6}$ $gamma/e^{-}$. In contrast to the FBK VUV-HD3, the emission spectra of the HPK VUV4 dont show an interference pattern -- most likely due to a thinner surface coating. EMMIs of the HPK VUV4 also reveal a larger number of hotspots compared to the FBK VUV-HD3, especially in one of the corners of the device.
Charging-up processes affecting gain stability in Thick Gas Electron Multipliers (THGEM) were studied with a dedicated simulation toolkit. Integrated with Garfield++, it provides an effective platform for systematic phenomenological studies of charging-up processes in MPGD detectors. We describe the simulation tool and the fine-tuning of the step-size required for the algorithm convergence, in relation to physical parameters. Simulation results of gain stability over time in THGEM detectors are presented, exploring the role of electrode-thickness and applied voltage on its evolution. The results show that the total amount of irradiated charge through electrodes hole needed for reaching gain stabilization is in the range of tens to hundreds of pC, depending on the detector geometry and operational voltage. These results are in agreement with experimental observations presented previously.
We develop from first principles a model to describe the average response of SiPM devices which takes into account the recovery of pixels during the incoming light pulse. Such effects can significantly affect SiPM response when exposed to a large number of photons.
The Gravitational wave high-energy Electromagnetic Counterpart All-sky Monitor (GECAM) satellite consists of two small satellites. Each GECAM payload contains 25 gamma ray detectors (GRD) and 8 charged particle detectors (CPD). GRD is the main detect
or which can detect gamma-rays and particles and localize the Gamma-Ray Bursts (GRB),while CPD is used to help GRD to discriminate gamma-ray bursts and charged particle bursts. The GRD makes use of lanthanum bromide (LaBr3) crystal readout by SiPM. As the all available SiPM devices belong to commercial grade, quality assurance tests need to be performed in accordance with the aerospace specifications. In this paper, we present the results of quality assurance tests, especially a detailed mechanism analysis of failed devices during the development of GECAM. This paper also summarizes the application experience of commercial-grade SiPM devices in aerospace payloads, and provides suggestions for forthcoming SiPM space applications.
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