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Register a new userCharacterisation of SiPM Photon Emission in the Dark
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In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark condition, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM, and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC). Spectral measurements of their light emission were taken with varying over-voltage in the wavelength range of 450--1020,nm. For the FBK VUV-HD3, at an over-voltage of $12.1pm1.0$,V, we measure a secondary photon yield (number of photons ($gamma$) emitted per charge carrier ($e^{-}$)) of $(4.04pm0.02)times 10^{-6}$ $gamma/e^{-}$. The emission spectrum of the FBK VUV-HD3 contains an interference pattern consistent with thin-film interference. Additionally, emission microscopy images (EMMIs) of the FBK VUV-HD3 show a small number of highly localized regions with increased light intensity (hotspots) randomly distributed over the SiPM surface area. For the HPK VUV4 MPPC, at an over-voltage of $10.7pm1.0$,V, we measure a secondary photon yield of $(8.71pm0.04)times 10^{-6}$ $gamma/e^{-}$. In contrast to the FBK VUV-HD3, the emission spectra of the HPK VUV4 dont show an interference pattern -- most likely due to a thinner surface coating. EMMIs of the HPK VUV4 also reveal a larger number of hotspots compared to the FBK VUV-HD3, especially in one of the corners of the device.
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In this paper we report on the characterization of SiPM tiles developed for the R & D on the DUNE Photon Detection System. The tiles were produced by Fondazione Bruno Kessler (FBK) employing NUV-HD-SF SiPMs. Special emphasis is given on cryo-reliability of the sensors, i.e. the stability of electric and mechanical properties after thermal cycles at room and 77K temperature. The characterization includes the determination of the I-V curve, a high sensitivity measurement of Dark Count Rate at different overvoltages, and correlated noise. The single p.e. sensitivity is measured as a function of the number of sensors connected to a single electronic channel, after amplification at 77K using a dedicated cold amplifier.
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This paper describes a comparison of photon detection efficiency and optical crosstalk measurements performed by three partners: Geneva University, Catania Observatory and Nagoya University. The measurements were compared for three different SiPM devices with different active areas: from 9 $mm^2$ up to 93.6 $mm^2$ produced by Hamamatsu. The objective of this work is to establish the measurements and analysis procedures for calculating the main SiPM parameters and their precision. This work was done in the scope of SENSE project which aims to build roadmap for the last developments in field of sensors for low light level detection.
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