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Register a new userModeling the response of a recovering SiPM
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Daniel Jeans
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We develop from first principles a model to describe the average response of SiPM devices which takes into account the recovery of pixels during the incoming light pulse. Such effects can significantly affect SiPM response when exposed to a large number of photons.
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The response of RPC detectors is highly sensitive to environmental variables. A novel approach is presented to model the response of RPC detectors in a variety of experimental conditions. The algorithm, based on Artificial Neural Networks, has been developed and tested on the CMS RPC gas gain monitoring system during commissioning.
We present a prototype for the first tracking detector consisting of 250 micron thin scintillating fibers and silicon photomultiplier (SiPM) arrays. The detector has a modular design, each module consists of a mechanical support structure of 10mm Rohacell foam between two 100 micron thin carbon fiber skins. Five layers of scintillating fibers are glued to both top and bottom of the support structure. SiPM arrays with a channel pitch of 250 micron are placed in front of the fibers. We show the results of the first module prototype using multiclad fibers of types Bicron BCF-20 and Kuraray SCSF-81M that were read out by novel 32-channel SiPM arrays from FBK-irst/INFN Perugia as well as 32-channel SiPM arrays produced by Hamamatsu. A spatial resolution of 88 micron +/- 6 micron at an average yield of 10 detected photons per minimal ionizig particle has been achieved.
The silicon photo-multipliers (SiPMs) are commonly used in the construction of radiation detectors such as those used in high energy experiments and its applications, where an excellent time resolution is required for triggering. In most of this cases, the trigger systems electric charge information is discarded due to limitations in data acquisition. In this work we propose a method using a simple radiation detector based on an organic plastic scintillator $2times2times0.3$~cm$^3$ size, to estimate the electric charge obtained from the acquisition of the fast output signal of a SensL SiPM model C-60035-4P-EVB. Our results suggest a linear relation between the reconstructed electric charge from the fast output of the SiPM used with respect to the one reconstructed with its standard signal output. Using our electric charge reconstruction method, we compared the sensitivity of two plastic scintillators, BC404 and BC422Q, under the presence of Sr90, Cs137, Co60, and Na22 radiation sources.
In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark condition, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM, and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC). Spectral measurements of their light emission were taken with varying over-voltage in the wavelength range of 450--1020,nm. For the FBK VUV-HD3, at an over-voltage of $12.1pm1.0$,V, we measure a secondary photon yield (number of photons ($gamma$) emitted per charge carrier ($e^{-}$)) of $(4.04pm0.02)times 10^{-6}$ $gamma/e^{-}$. The emission spectrum of the FBK VUV-HD3 contains an interference pattern consistent with thin-film interference. Additionally, emission microscopy images (EMMIs) of the FBK VUV-HD3 show a small number of highly localized regions with increased light intensity (hotspots) randomly distributed over the SiPM surface area. For the HPK VUV4 MPPC, at an over-voltage of $10.7pm1.0$,V, we measure a secondary photon yield of $(8.71pm0.04)times 10^{-6}$ $gamma/e^{-}$. In contrast to the FBK VUV-HD3, the emission spectra of the HPK VUV4 dont show an interference pattern -- most likely due to a thinner surface coating. EMMIs of the HPK VUV4 also reveal a larger number of hotspots compared to the FBK VUV-HD3, especially in one of the corners of the device.
The temperature of a nonneutral plasma confined in a Penning-Malmberg trap can be determined by slowly lowering one side of the traps electrostatic axial confinement barrier; the temperature is inferred from the rate at which particles escape the trap as a function of the barrier height. Often, the escaping particles are directed toward a microchannel plate (MCP), and the resulting amplified charge is collected on a phosphor screen. The screen is used for imaging the plasma, but can also be used as a Faraday cup FC for a temperature measurement. The sensitivity limit is then set by microphonic noise enhanced by the screens high voltage bias. Alternately, a silicon photomultiplier (SiPM) can be employed to measure the charge via the light emitted from the phosphor screen. This decouples the signal from the microphonic noise and allows the temperature of colder and smaller plasmas to be measured than could be measured previously; this paper focusses on the advantages of a SiPM over a FC.
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