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Register a new userSimulation of gain stability of THGEM gas-avalanche particle detectors
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Charging-up processes affecting gain stability in Thick Gas Electron Multipliers (THGEM) were studied with a dedicated simulation toolkit. Integrated with Garfield++, it provides an effective platform for systematic phenomenological studies of charging-up processes in MPGD detectors. We describe the simulation tool and the fine-tuning of the step-size required for the algorithm convergence, in relation to physical parameters. Simulation results of gain stability over time in THGEM detectors are presented, exploring the role of electrode-thickness and applied voltage on its evolution. The results show that the total amount of irradiated charge through electrodes hole needed for reaching gain stabilization is in the range of tens to hundreds of pC, depending on the detector geometry and operational voltage. These results are in agreement with experimental observations presented previously.
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Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.
Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $Phi_{eq}=3cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^circ$C in steps to times $>20000$ minutes. Their properties, mainly full depletion voltage, gain layer depletion voltage, generation and leakage current, as well as their performance in terms of collected charge and time resolution, were determined between the steps. It was found that the effect of annealing on timing resolution and collected charge is not very large and mainly occurs within the first few tens of minutes. It is a consequence of active initial acceptor concentration decrease in the gain layer with time, where changes of around 10% were observed. For any relevant annealing times for detector operation the changes of effective doping concentration in the bulk negligibly influences the performance of the device, due to their small thickness and required high bias voltage operation. At very long annealing times the increase of the effective doping concentration in the bulk leads to a significant increase of the electric field in the gain layer and, by that, to the increase of gain at given voltage. The leakage current decreases in accordance with generation current annealing.
To meet the timing resolution requirement of up-coming High Luminosity LHC (HL-LHC), a new detector based on the Low-Gain Avalanche Detector(LGAD), High-Granularity Timing Detector (HGTD), is under intensive research in ATLAS. Two types of IHEP-NDL LGADs(BV60 and BV170) for this update is being developed by Institute of High Energy Physics (IHEP) of Chinese Academic of Sciences (CAS) cooperated with Novel Device Laboratory (NDL) of Beijing Normal University and they are now under detailed study. These detectors are tested with $5GeV$ electron beam at DESY. A SiPM detector is chosen as a reference detector to get the timing resolution of LGADs. The fluctuation of time difference between LGAD and SiPM is extracted by fitting with a Gaussian function. Constant fraction discriminator (CFD) method is used to mitigate the effect of time walk. The timing resolution of $41 pm 1 ps$ and $63 pm 1 ps$ are obtained for BV60 and BV170 respectively.
Discrepancies between the measured and simulated gain in Thick Micropatterned gaseous detectors (MPGD), namely THGEM, have been observed by several groups. In order to simulate the electron avalanches and the gain the community relies on the calculations performed in Garfield++, known to produce differences of 2 orders of magnitude in comparison to the experimental data for thick MPGDs. In this work, simulations performed for Ne/5%CH4, Ar/5%CH4 and Ar/30%CO2 mixtures shows that Garfield++ is able to perfectly describe the experimental data if Penning effect is included in the simulation. The comparison between the number of excitations which may lead to a Penning transfer, is shown for THGEM and GEM, explaining the less pronounced gain discrepancies observed in GEM.
We report a precise TCAD simulation for low gain avalanche detector (LGAD) with calibration by secondary ion mass spectroscopy (SIMS). The radiation model - LGAD Radiation Damage Model (LRDM) combines local acceptor degeneration with global deep energy levels is proposed. The LRDM could predict the leakage current level and the behavior of capacitance for irradiated LGAD sensor at -30 $^{circ}$C after irradiation fluence $rm Phi_{eq}=2.5 times 10^{15} ~n_{eq}/cm^{2}$.
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