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Register a new userMapping of ion beam induced current changes in FinFETs
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We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.
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A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several mA through the graphene device, which is here typically a few $mu$m wide. This ultra-high current density is shown to remove contamination adsorbed on the surface. This method is well suited for quantum electron transport studies of undoped graphene devices, and its utility is demonstrated here by measuring the anomalous quantum Hall effect.
Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the $p$-$n$ junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a reduced and nonuniform EBIC lineshape for excitations in the depletion region. Motivated by this, we present a model of the EBIC response for excitations in the depletion region which includes the effects of surface recombination from both charge-neutral and charged surfaces. For neutral surfaces we present a simple analytical formula which describes the numerical data well, while the charged surface response depends qualitatively on the location of the surface Fermi level relative to the bulk Fermi level. We find the experimental data on FIB-prepared Si solar cells is most consistent with a charged surface, and discuss the implications for EBIC experiments on polycrystalline materials.
Investigations of the complex behavior of the magnetization of manganese arsenide thin films due to defects induced by irradiation of slow heavy ions are presented. In addition to the thermal hysteresis suppression already highlighted in M. Trassinelli et al., Appl. Phys. Lett. 104, 081906 (2014), we report here on new local magnetic features recorded by a magnetic force microscope at different temperatures close to the characteristic sample phase transition. Complementary measurements of the global magnetization measurements in different conditions (applied magnetic field and temperatures) enable to complete the film characterization. The obtained results suggest that the ion bombardment produces regions where the local mechanical constraints are significantly different from the average, promoting the local presence of magneto-structural phases far from the equilibrium. These regions could be responsible for the thermal hysteresis suppression previously reported, irradiation-induced defects acting as seeds in the phase transition.
The response in capacitance to low external magnetic fields (up to 0.1 T) of suspensions of spherical magnetic nanoparticles, single-wall carbon nanotubes (SWCNT), SWCNT functionalized with carboxyl group (SWCNT-COOH) and SWCNT functionalized with Fe$_3$O$_4$ nanoparticles in a nematic liquid crystal has been studied experimentally. The volume concentration of nanoparticles was $phi_1$ = 10$^{-4}$ and $phi_2$ = 10$^{-3}$. Independent of the type and the volume concentration of the nanoparticles, a linear response to low magnetic fields (far below the magnetic Freederiksz transition threshold) has been observed, which is not present in the undoped nematic.
A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisk resonators were fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due to optical scattering losses induced by implanted gallium atoms.
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