Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userInduced Optical Losses in Optoelectronic Devices due to Focused Ion Beam Damages
212
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisk resonators were fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due to optical scattering losses induced by implanted gallium atoms.
rate research
Read More
Nanostructures have become an attractive subject due to many applications, particularly the photonic bandgap effect observed in photonic crystals. Nevertheless, the fabrication of such structures remains a challenge because of accurate requirement concerning regularity, shape, hole depth etc. of the structure. E-beam lithography permits a good control of dimensional parameters but needs a 1-step fabrication process. In our work, we have to combine traditional strip-load waveguides (SiO2/SiON/SiO2 on Si) and nanostructures whose dimension are totally different. This imposes a 2-step process where waveguides and nanostructures are successively fabricated. We have at our disposal different ways to characterize these nanostructures. A direct aspect control during and after FIB treatment can be achieved by FIB and SEM imaging. Scanning near-field optical microscopy (SNOM) is currently the most effective way to test guiding confinement in such surface structures by detecting the evanescent field.
Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is Jc= 1.5 10^5 A/cm2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.
Superconductor-Ferromagnet-Superconductor (S-F-S) Josephson junctions were fabricated by making a narrow cut through a S-F double layer using direct writing by Focused Ion Beam (FIB). Due to a high resolution (spot size smaller than 10 nm) of FIB, junctions with a small separation between superconducting electrodes ($leq$ 30 nm) can be made. Such a short distance is sufficient for achieving a considerable proximity coupling through a diluted CuNi ferromagnet. We have successfully fabricated and studied S-F-S (Nb-CuNi-Nb) and S-S-S (Nb-Nb/CuNi-Nb) junctions. Junctions exhibit clear Fraunhofer modulation of the critical current as a function of magnetic field, indicating good uniformity of the cut. By changing the depth of the cut, junctions with the $I_c R_n$ product ranging from 0.5 mV to $sim 1mu $V were fabricated.
We report on two novel ways for patterning Lithium Niobate (LN) at submicronic scale by means of focused ion beam (FIB) bombardment. The first method consists of direct FIB milling on LiNbO3 and the second one is a combination of FIB milling on a deposited metallic layer and subsequent RIE (Reactive Ion Etching) etching. FIB images show in both cases homogeneous structures with well reproduced periodicity. These methods open the way to the fabrication of photonic crystals on LiNbO3 substrates.
A focused ion beam is used to mill side holes in air-silica structured fibres. By way of example, side holes are introduced in two types of air-structured fibres (1) a photonic crystal four-ring fibre and (2) a 6-hole single ring step index structured fibre.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
