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Register a new userSurface optical Raman modes in InN nanostructures
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Raman spectroscopic investigations are carried out on one-dimensional nanostructures of InN,such as nanowires and nanobelts synthesized by chemical vapor deposition. In addition to the optical phonons allowed by symmetry; A1, E1 and E2(high) modes, two additional Raman peaks are observed around 528 cm-1 and 560 cm-1 for these nanostructures. Calculations for the frequencies of surface optical (SO) phonon modes in InN nanostructures yield values close to those of the new Raman modes. A possible reason for large intensities for SO modes in these nanostructures is also discussed.
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We have used Raman spectroscopy to study indium nitride thin films grown by molecular beam epitaxy on (111) silicon substrates at temperatures between 450 and 550 C. The Raman spectra show well defined peaks at 443, 475, 491, and 591 cm{-1}, which correspond to the A_1(TO), E_1(TO), E_2^{high}, and A_1(LO) phonons of the wurtzite structure, respectively. In backscattering normal to the surface the A_1(TO) and E_1(TO) peaks are very weak, indicating that the films grow along the hexagonal c axis. The dependence of the peak width on growth temperature reveals that the optimum temperature is 500 C, for which the fullwidth of the E_2^{high} peak has the minimum value of 7 cm{-1}. This small value, comparable to previous results for InN films grown on sapphire, is evidence of the good crystallinity of the films.
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
Recently, studies have been carried out on attempts to combine surface-enhanced Surface-enhanced Raman spectroscopy (SERS) substrates that can be based on either localized surface plasmon (LSP) or surface plasmon polaritons (SPP) structures. By combining these two systems, the drawbacks of each other can be solved. However, the manufacturing methods involved so far are sophisticated, labor-intensive, expensive, and also technically demanding. We propose a facile method for the fabrication of a flexible plasmonic nanoslit SERS sensor. We utilized the pattern on periodic optical disks (DVD-R) as a cheap substitute for printing the periodic pattern on PDMS with soft imprint lithography. Ag nanoslit (AgNS) was fabricated by serial bideposition using a dynamic oblique angle deposition (DOD) technique. The nanoslit structures were physically and optically characterized, and the experimental results were compared to the numerical simulation studies; Monte Carlo and the finite-difference time-domain (FDTD) simulation. The Ag nanoslit structure showed an excellent SERS enhancement, and its biosensing capability was demonstrated by the sensing of bilirubin.
In nanostructure electronic devices, it is well-known that the optical lattice waves in the constituent semiconductor crystals have to obey both mechanical and electrical boundary conditions at an interface. The theory of hybrid optical modes, established for cubic crystals, is here applied to hexagonal crystals. In general, the hybrid is a linear combination of a longitudinally-polarized (LO) mode, an interface mode (IF), and an interface TO mode. It is noted that the dielectric and elastic anisotropy of these crystals add significant complications to the assessment of the electro-phonon interaction. We point out that, where extreme accuracy is not needed, a cubic approximation is available. The crucial role of lattice dispersion is emphasised. In the extreme long-wavelength limit, where lattice dispersion is unimportant, the polar optical hybrid consists of an LO component plus an IF component only. In his case no fields are induced in the barrier, and there are no remote-phonon effects.
Raman forbidden modes and surface defect related Raman features in SnO_2 nanostructures carry information about disorder and surface defects which strongly influence important technological applications like catalysis and sensing. Due to the weak intensities of these peaks, it is difficult to identify these features by using conventional Raman spectroscopy. Tip enhanced Raman spectroscopy (TERS) studies conducted on SnO_2 nanoparticles (NPs) of size 4 and 25 nm have offered significant insights of prevalent defects and disorders. Along with one order enhancement in symmetry allowed Raman modes, new peaks related to disorder and surface defects of SnO_2 NPs were found with significant intensity. Temperature dependent Raman studies were also carried out for these NPs and correlated with the TERS spectra. For quasi-quantum dot sized 4 nm NPs, the TERS study was found to be the best technique to probe the finite size related Raman forbidden modes.
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