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Register a new userBroadband method for precise microwave spectroscopy of superconducting thin films near the critical temperature
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We present a high-resolution microwave spectrometer to measure the frequency-dependent complex conductivity of a superconducting thin film near the critical temperature. The instrument is based on a broadband measurement of the complex reflection coefficient, $S_{rm 11}$, of a coaxial transmission line, which is terminated to a thin film sample with the electrodes in a Corbino disk shape. In the vicinity of the critical temperature, the standard calibration technique using three known standards fails to extract the strong frequency dependence of the complex conductivity induced by the superconducting fluctuations. This is because a small unexpected difference between the phase parts of $S_{rm 11}$ for a short and load standards gives rise to a large error in the detailed frequency dependence of the complex conductivity near the superconducting transition. We demonstrate that a new calibration procedure using the normal-state conductivity of a sample as a load standard resolves this difficulty. The high quality performance of this spectrometer, which covers the frequency range between 0.1 GHz and 10 GHz, the temperature range down to 10 K, and the magnetic field range up to 1 T, is illustrated by the experimental results on several thin films of both conventional and high temperature superconductors.
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Thin superconducting films form a unique platform for geometrically-confined, strongly-interacting electrons. They allow an inherent competition between disorder and superconductivity, which in turn enables the intriguing superconducting-to-insulator transition and believed to facilitate the comprehension of high-Tc superconductivity. Furthermore, understanding thin film superconductivity is technologically essential e.g. for photo-detectors, and quantum-computers. Consequently, the absence of an established universal relationships between critical temperature ($T_c$), film thickness ($d$) and sheet resistance ($R_s$) hinders both our understanding of the onset of the superconductivity and the development of miniaturised superconducting devices. We report that in thin films, superconductivity scales as $d^.$$T_c(R_s)$. We demonstrated this scaling by analysing the data published over the past 46 years for different materials (and facilitated this database for further analysis). Moreover, we experimentally confirmed the discovered scaling for NbN films, quantified it with a power law, explored its possible origin and demonstrated its usefulness for superconducting film-based devices.
We study the critical charge dynamics of the superconducting to the normal-state transition for LSCO thin films with a wide range of the Sr concentration, by measuring the frequency-dependent excess parts of the complex microwave conductivity, which is induced by the superconducting fluctuations. We present a dynamic scaling analysis of the complex fluctuation conductivity, which includes the information on the universality class and the dimensionality of the critical charge dynamics as a function of the Sr concentration, the film thickness and the magnetic field. In our previous study (H. Kitano et al., Phys. Rev. B 73, 092504 (2006).), the 2D-XY critical dynamics for underdoped LSCO and the 3D-XY critical dynamics for optimally doped LSCO were reported. In this study, we observed a novel two-dimensional unknown critical charge dynamics for overdoped thin films from x=0.17 to 0.20, which is clearly distinguished from the 2D-XY critical dynamics. Through the systematic measurements by changing the film thickness or by applying small magnetic field, it was confirmed that this unusual behavior, which is referred as 2D-U below, was not induced by the finite size effect but was intrinsic to the overdoped LSCO. Thus, it was found that the critical behavior in the phase diagram of LSCO is classified into the following three types; (i) 2D-XY for underdoped region, (ii) 3D-XY for optimally doped region, and (iii) 2D-U for overdoped region. In other words, the dimensionality in the critical charge dynamics is changed twice with hole doping. We discuss possible origins of such anomalous dimensional crossovers with hole doping, including an interpretation based on the possible existence of a hidden quantum critical point near the optimally doped region.
FeTe, a non-superconducting parent compound in the iron-chalcogenide family, becomes superconducting after annealing in oxygen. Under the presence of magnetism, spin-orbit coupling, inhomogeneity and lattice distortion, the nature of its superconductivity is not well understood. Here, we combined mutual inductance technique with magneto transport to study the magnetization and superconductivity of FeTe thin films. We found that the films with the highest Tc showed non-saturating superfluid density and a strong magnetic hysteresis distinct from that in a homogeneous superconductor. Such hysteresis can be well explained by a two-level critical state model and suggested the importance of granularity to superconductivity in this compound.
The carrier concentration of Tl2Ba2CaCu2O8 films was modified by annealing in N2 gas. X-ray analysis of the structure and the oxygen content revealed a correspondence between carrier concentration and oxygen depletion. The TC and nonlinear surface impedance was measured using a dielectric resonator and the nonlinearity slope parameter r=dXS/dRS was found to converge to unity at the critical temperature, indicating a dominance of Josephson fluxon hysteresis on the nonlinearity. Highly inductive nonlinearity was observed in a small range of doping levels between 0.180<p<0.195 holes/Cu, which does not include the optimal doping level of 0.16 holes/Cu.
Vortices in superconductors driven at microwave frequencies exhibit a response related to the interplay between the vortex viscosity, pinning strength, and flux creep effects. At the same time, the trapping of vortices in superconducting microwave resonant circuits contributes excess loss and can result in substantial reductions in the quality factor. Thus, understanding the microwave vortex response in superconducting thin films is important for the design of such circuits, including superconducting qubits and photon detectors, which are typically operated in small, but non-zero, magnetic fields. By cooling in fields of the order of 100 $mu$T and below, we have characterized the magnetic field and frequency dependence of the microwave response of a small density of vortices in resonators fabricated from thin films of Re and Al, which are common materials used in superconducting microwave circuits. Above a certain threshold cooling field, which is different for the Re and Al films, vortices become trapped in the resonators. Vortices in the Al resonators contribute greater loss and are influenced more strongly by flux creep effects than in the Re resonators. This different behavior can be described in the framework of a general vortex dynamics model.
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