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Register a new userFermi-surface calculation of the anomalous Hall conductivity
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While the intrinsic anomalous Hall conductivity is normally written in terms of an integral of the electronic Berry curvature over the occupied portions of the Brillouin zone, Haldane has recently pointed out that this quantity (or more precisely, its ``non-quantized part) may alternatively be expressed as a Fermi-surface property. Here we present an {it ab-initio} approach for computing the anomalous Hall conductivity that takes advantage of this observation by converting the integral over the Fermi sea into a more efficient integral on the Fermi surface only. First, a conventional electronic-structure calculation is performed with spin-orbit interaction included. Maximally-localized Wannier functions are then constructed by a post-processing step in order to convert the {it ab-initio} electronic structure around the Fermi level into a tight-binding-like form. Working in the Wannier representation, the Brillouin zone is sampled on a large number of equally spaced parallel slices oriented normal to the total magnetization. On each slice, we find the intersections of the Fermi-surface sheets with the slice by standard contour methods, organize these into a set of closed loops, and compute the Berry phases of the Bloch states as they are transported around these loops. The anomalous Hall conductivity is proportional to the sum of the Berry phases of all the loops on all the slices. Illustrative calculations are performed for Fe, Co and Ni.
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The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strain state, and oxygen deficiency. Despite substantial differences in the magnetic properties and magnitudes of the anomalous Hall conductivity $sigma_{xy}^{rm AHE}$ and the longitudinal conductivity $sigma_{xx}$ over several orders of magnitude, a universal scaling relation $sigma_{xy}^{rm AHE} propto sigma_{xx}^{alpha}$ with $alpha = 1.69 pm 0.08$ was found for all investigated samples. Our results are in agreement with recent theoretical and experimental findings for ferromagnetic metals in the dirty limit, where transport is by metallic conduction. We find the same scaling relation for magnetite, where hopping transport prevails. The fact that this relation is independent of crystallographic orientation, Zn content, strain state, and oxygen deficiency suggests that it is universal and particularly does not depend on the nature of the transport mechanism.
It is known that the Shubnikov--de Haas oscillations can be observed in the Hall resistivity, although their amplitude is much weaker than the amplitude of the diagonal resistivity oscillations. Employing a model of two-dimensional massive Dirac fermions that exhibits anomalous Hall effect, we demonstrate that the amplitude of the Shubnikov--de Haas oscillations of the anomalous Hall conductivity is the same as that of the diagonal conductivity. We argue that the oscillations of the anomalous Hall conductivity can be observed by studying the valley Hall effect in graphene superlattices and the spin Hall effect in the low-buckled Dirac materials.
Itinerant ferromagnets constitute an important class of materials wherein spin-polarization can affect the electric transport properties in nontrivial ways. One such phenomenon is anomalous Hall effect which depends on the details of the band structure such as the amount of band crossings in the valence band of the ferromagnet. Here, we have found extraordinary anomalous Hall effect in an itinerant ferromagnetic metal LaCrSb3. The rather two-dimensional nature of the magnetic subunit imparts large anisotropic anomalous Hall conductivity of 1250 S/cm at 2K. Our investigations suggest that a strong Berry curvature by abundant momentum-space crossings and narrow energy-gap openings are the primary sources of the anomalous Hall conductivity. An important observation is the existence of quasi-dispersionless bands in LaCrSb3 which is now known to increase the anomalous Hall conductivity. After introducing f-electrons, anomalous Hall conductivity experiences more than two-fold increase and reaches 2900 S/cm in NdCrSb3.
The nontrivial band structure of semimetals has attracted substantial research attention in condensed matter physics and materials science in recent years owing to its intriguing physical properties. Within this class, a group of non-trivial materials known as nodal-line semimetals is particularly important. Nodal-line semimetals exhibit the potential effects of electronic correlation in nonmagnetic materials, whereas they enhance the contribution of the Berry curvature in magnetic materials, resulting in high anomalous Hall conductivity (AHC). In this study, two ferromagnetic compounds, namely ZrMnP and HfMnP, are selected, wherein the abundance of mirror planes in the crystal structure ensures gapped nodal lines at the Fermi energy. These nodal lines result in one of the largest AHC values of 2840 ohm^-1cm^-1, with a high anomalous Hall angle of 13.6 % in these compounds. First-principles calculations provide a clear and detailed understanding of nodal line-enhanced AHC. Our finding suggests a guideline for searching large AHC compounds.
A short review paper for the quantum anomalous Hall effect. A substantially extended one is published as Adv. Phys. 64, 227 (2015).
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