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2D-MIT as self-doping of a Wigner-Mott insulator

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 Publication date 2007
  fields Physics
and research's language is English




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We consider an interaction-driven scenario for the two-dimensional metal-insulator transition in zero magnetic field (2D-MIT), based on melting the Wigner crystal through vacancy-interstitial pair formation. We show that the transition from the Wigner-Mott insulator to a heavy Fermi liquid emerges as an instability to self-doping, resembling conceptually the solid to normal liquid transition in He3. The resulting physical picture naturally explains many puzzling features of the 2D-MIT.



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We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner crystal. Kinetic energy gained by delocalizing such excitations is found to lead to an instability of the insulator to self-doping above a critical carrier concentration $n=n_c$, mapping the problem to a density-driven Mott MIT. This mechanism provides a natural microscopic picture of several puzzling experimental features, including the large effective mass enhancement, the large resistivity drop, and the large positive magneto-resistance on the metallic side of the transition. We also present a global phase diagram for the clean 2D electron gas as a function of $n$ and parallel magnetic field $B_{shortparallel}$, which agrees well with experimental findings in ultra clean samples.
We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in analogy to the one-band supersymmetric t-J model. We use the Bethe ansatz to derive a set of nonlinear integral equations which allow us to study the thermodynamics exactly. Moving away from this special point in parameter space we use the density-matrix renormalization group applied to transfer matrices to study the evolution of various phases of the undoped system with doping and temperature. Finally, we study a one-dimensional version of a realistic model for cubic titanates which includes the anisotropy of the orbital sector due to Hunds coupling. We find a transition from a phase with antiferromagnetically correlated spins to a phase where the spins are fully ferromagnetically polarized, a strong tendency towards phase separation at large Hunds coupling, as well as the possibility of an instability towards triplet superconductivity.
Whether or not anomalies in the thermal conductivity from insulating cuprates can be attributed to antiferromagnetic order and magnons in a 2D Mott insulator remains an intriguing open question. To shed light on this issue, we investigate the thermal conductivity $kappa$ and specific heat $c_v$ of the half-filled 2D single-band Hubbard model using the numerically exact determinant quantum Monte Carlo algorithm and maximum entropy analytic continuation. Both $c_v$ and $kappa$ possess two peaks as a function of temperature, with scales related to the Hubbard interaction energy $U$ and spin superexchange energy $J$, respectively. At low temperatures where the charge degrees of freedom are gapped-out, our results for the contribution to both $c_v$ and the Drude weight associated with $kappa$ from the kinetic energy agree well with spin-wave theory for the spin-$frac{1}{2}$ antiferromagnetic Heisenberg model.
152 - Cheng Hu , Jianfa Zhao , Qiang Gao 2021
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to the spectral weight transfer from the charge transfer band to the gapped region and the induced low-energy states emerge in a wide energy range inside the Mott gap. These results provide key information on the electronic evolution in doping a Mott insulator and establish a basis for developing microscopic theories for cuprate superconductivity.
86 - Su-Peng Kou , Z.Y. Weng 2004
We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T$_c$ cuprates. Disorder and impurities only play a minor and assistant role here.
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