The location of wireless sensor nodes located in the center is necessary for applications
where information about the site is important information such as security, protection,
object tracking and other applications.
localization algorithms are c
lassified into two types: Range-based and Range-free. The
study focused on Range-free localization algorithms because they are less expensive in
terms of hardware requirements.
The MATLAB was used to simulate the algorithms, whose performance was evaluated by
changing the number of network nodes, the number of Anchor nodes, and the contract area
of communication in order to illustrate performance differences in terms of localization
error.
The results showed the superiority of the amorphous algorithm, achieving high localization
accuracy and lower cost for the number of Anchor nodes needed to achieve a small error.
We study the concentration of the defects created by the light from the measurement of the Fermi state displacement deduced from the conductivity variation with the temperature for samples of hydrogenated amorphous silicon (a-Si:H) deposited by Plasm
a Enhanced Chemical Vapor Deposition (PECVD). This study demonstrated that the value of the activation energy of the samples in the case of As-depos. indicate that the samples before the warm-up (as are upon receipt of these samples from the laboratory) partially exposed to light during the process of transportation and storage. Been explained the effect of light on this samples that it was returning to cut weak silicon bonds and then the creation of new dangling bonds. We also found that the samples containing less hydrogen are the most affected by the light which indicates the important role of hydrogen in the satisfaction of defects. Also found that samples which contain germanium by less dopant are most affected by light.
