This research is a theoretical study for the scattering mechanism of the charge carrier in the transport tunnels of system consisting of metal-insulator- semiconductor (MIS)- When the insulator is polarized where the conductivity of surface for semic
onductor polarization behavior due to charge transfer during interfaces. The aim of this research is to investigate the effect of self-action and polarization potentials on the ground state of electron- polaron in semiconductor layer by means of is olating the Schrodinger equation and discussion of some special cases such as the potential is triangular form (case of contact metal – semiconductor).
In this work, the effect of electric permittivity and thin layer thickness on the energy
gape has been studied in a system consisting of three thin layers by means of finding the
self action potential of charge carrier located in the central layer
of this system. Then, the
self action potential energy has been found by solving Schrödinger equation at the
extracted potential. This study shows that energy gape of PbI2 decreases with layer
thickness while it increases/decreases according to comparison between dielectric
permittivity values of central layer and counterparts of two neighborhood layers on both sides.
