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Compounds with the A15 structure have attracted extensive attention due to their superconductivity and nontrivial topological band structure. We have successfully grown Nb$_3$Sb single crystals with a A15 structure and systematically measured the longitudinal resistivity, Hall resistivity and quantum oscillations in magnetization. Similar to other topological trivial/nontrivial semimetals, Nb$_3$Sb, exhibits large magnetoresistance (MR) at low temperatures (717$%$, 2 K and 9 T), unsaturating quadratic field dependence of MR and up-turn behavior in $rho_{xx}$(emph{T}) curves under magnetic field, which is considered to result from a perfect hole-electron compensation, as evidenced by the Hall resistivity measurements. The nonzero Berry phase obtained from the de-Hass van Alphen (dHvA) oscillations demonstrates that Nb$_3$Sb is topologically nontrivial. These results indicate that Nb$_{3}$Sb superconductor is also a semimetal with large MR and nontrivial Berry phase, indicating that Nb$_{3}$Sb may be another platform to search for Majorana zero-energy mode.
The cubic A15 structure metals, with over 60 distinct member compounds, held the crown of highest Tc superconductor starting in 1954 with the discovery of Tc=18 K in Nb3Sn. Tc increased over the next 20 years until the discovery in 1973 of Tc = 22.3
We present the first report on a large low-temperature magnetoresistance (MR) of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Ca ion-implanted SrFe2As2 single crystal that occurs before the emergence of crystallographic stra
The subject of topological materials has attracted immense attention in condensed-matter physics, because they host new quantum states of matter containing Dirac, Majorana, or Weyl fermions. Although Majorana fermions can only exist on the surface of
We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity rhoxx(T,H), Hall resistivity rhoxy(T,H) and quantum oscillations of the magnetization as a function of temperature at va
Geometrical Berry phase is recognized as having profound implications for the properties of electronic systems. Over the last decade, Berry phase has been essential to our understanding of new materials, including graphene and topological insulators.