اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدExciton gas transport through nano-constrictions
78
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
An indirect exciton is a bound state of an electron and a hole in spatially separated layers. Two-dimensional indirect excitons can be created optically in heterostructures containing double quantum wells or atomically thin semiconductors. We study theoretically transmission of such bosonic quasiparticles through nano-constrictions. We show that quantum transport phenomena, e.g., conductance quantization, single-slit diffraction, two-slit interference, and the Talbot effect, are experimentally realizable in systems of indirect excitons. We discuss similarities and differences between these phenomena and their counterparts in electronic devices.
قيم البحث
اقرأ أيضاً
We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We s
tudy the effect of an applied side gate voltage on the transport gap and show that high side gate voltages lift the suppression of the conductance. Finally we study the effect of an applied magnetic field and demonstrate the presence of edge states in the constriction.
We investigate the propagation of spin impurity atoms through a strongly interacting one-dimensional Bose gas. The initially well localized impurities are accelerated by a constant force, very much analogous to electrons subject to a bias voltage, an
d propagate as a one-dimensional impurity spin wave packet. We follow the motion of the impurities in situ and characterize the interaction induced dynamics. We observe a very complex non-equilibrium dynamics, including the emergence of large density fluctuations in the remaining Bose gas, and multiple scattering events leading to dissipation of the impuritys motion.
Electron-electron (e-e) collisions can impact transport in a variety of surprising and sometimes counterintuitive ways. Despite strong interest, experiments on the subject proved challenging because of the simultaneous presence of different scatterin
g mechanisms that suppress or obscure consequences of e-e scattering. Only recently, sufficiently clean electron systems with transport dominated by e-e collisions have become available, showing behavior characteristic of highly viscous fluids. Here we study electron transport through graphene constrictions and show that their conductance below 150 K increases with increasing temperature, in stark contrast to the metallic character of doped graphene. Notably, the measured conductance exceeds the maximum conductance possible for free electrons. This anomalous behavior is attributed to collective movement of interacting electrons, which shields individual carriers from momentum loss at sample boundaries. The measurements allow us to identify the conductance contribution arising due to electron viscosity and determine its temperature dependence. Besides fundamental interest, our work shows that viscous effects can facilitate high-mobility transport at elevated temperatures, a potentially useful behavior for designing graphene-based devices.
We experimentally demonstrate hot exciton transport in h-BN encapsulated WSe2 monolayers via spatially and temporally resolved photoluminescence measurements at room temperature. We show that the nonlinear evolution of the mean squared displacement o
f the non-resonantly excited hot exciton gas is primarily due to the relaxation of its excess kinetic energy and is characterized by a density-dependent fast expansion that converges to a slower, constant rate expansion. We also observe saturation of the hot exciton gas expansion rate at high excitation densities due to the balance between Auger-assisted hot exciton generation and the phonon-assisted hot exciton relaxation processes.
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribut
e this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
