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Using a semiclassical Boltzmann transport equation (BTE) approach, we derive analytical expressions for electric and thermoelectric transport coefficients of graphene in the presence and absence of a magnetic field. Scattering due to acoustic phonons, charged impurities and vacancies are considered in the model. Seebeck ($S_{xx}$) and Nernst ($N$) coefficients have been evaluated as functions of carrier density, temperature, scatterer concentration, magnetic field and induced band gap, and the results are compared with experimental data. $S_{xx}$ is an odd function of Fermi energy while $N$ is an even function, as observed in experiments. The peaks of both coefficients are found to increase with decreasing scatterer concentration and increasing temperature. Furthermore, opening a band gap decreases $N$ but increases $S_{xx}$. Applying a magnetic field introduces an asymmetry in the variation of $S_{xx}$ with Fermi energy across the Dirac point. The formalism is more accurate and computationally efficient than the conventional Greens function approach used to model transport coefficients and can be used to explore transport properties of other exotic materials.
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The role of defects in van der Waals heterostructures made of graphene and hexagonal boron nitride (h-BN) is studied by a combination of ab initio and model calculations. Despite the weak van der Waals interaction between layers, defects residing in
We report on the energy level alignment evolution of valence and conduction bands of armchair-oriented graphene nanoribbons (aGNR) as their band gap shrinks with increasing width. We use 4,4-dibromo-para-terphenyl as molecular precursor on Au(111) to
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