ترغب بنشر مسار تعليمي؟ اضغط هنا

Magnetothermoelectric effects in graphene and their dependence on scatterer concentration, magnetic field and band gap

58   0   0.0 ( 0 )
 نشر من قبل Arpan Kundu
 تاريخ النشر 2016
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Using a semiclassical Boltzmann transport equation (BTE) approach, we derive analytical expressions for electric and thermoelectric transport coefficients of graphene in the presence and absence of a magnetic field. Scattering due to acoustic phonons, charged impurities and vacancies are considered in the model. Seebeck ($S_{xx}$) and Nernst ($N$) coefficients have been evaluated as functions of carrier density, temperature, scatterer concentration, magnetic field and induced band gap, and the results are compared with experimental data. $S_{xx}$ is an odd function of Fermi energy while $N$ is an even function, as observed in experiments. The peaks of both coefficients are found to increase with decreasing scatterer concentration and increasing temperature. Furthermore, opening a band gap decreases $N$ but increases $S_{xx}$. Applying a magnetic field introduces an asymmetry in the variation of $S_{xx}$ with Fermi energy across the Dirac point. The formalism is more accurate and computationally efficient than the conventional Greens function approach used to model transport coefficients and can be used to explore transport properties of other exotic materials.

قيم البحث

اقرأ أيضاً

Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is its lacking of an energy gap in the electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphenes electronic spectra, they all require complex engineering of the graphene layer. Here we show that when graphene is epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe our results highlight a promising direction for band gap engineering of graphene.
The role of defects in van der Waals heterostructures made of graphene and hexagonal boron nitride (h-BN) is studied by a combination of ab initio and model calculations. Despite the weak van der Waals interaction between layers, defects residing in h-BN, such as carbon impurities and antisite defects, reveal a hybridization with graphene p$_{rm z}$ states, leading to midgap state formation. The induced midgap states modify the transport properties of graphene and can be reproduced by means of a simple effective tight-binding model. In contrast to carbon defects, it is found that oxygen defects do not strongly hybridize with graphenes low-energy states. Instead, oxygen drastically modifies the band gap of graphene, which emerges in a commensurate stacking on h-BN lattices.
We report on the energy level alignment evolution of valence and conduction bands of armchair-oriented graphene nanoribbons (aGNR) as their band gap shrinks with increasing width. We use 4,4-dibromo-para-terphenyl as molecular precursor on Au(111) to form extended poly-para-phenylene nanowires, which can be fused sideways to form atomically precise aGNRs of varying widths. We measure the frontier bands by means of scanning tunneling spectroscopy, corroborating that the nanoribbons band gap is inversely proportional to their width. Interestingly, valence bands are found to show Fermi level pinning as the band gap decreases below a threshold value around 1.7 eV. Such behavior is of critical importance to understand the properties of potential contacts in graphene nanoribbon-based devices. Our measurements further reveal a particularly interesting system for studying Fermi level pinning by modifying an adsorbates band gap while maintaining an almost unchanged interface chemistry defined by substrate and adsorbate.
We calculate the thermopower of monolayer graphene in various circumstances. First we show that experiments on the thermopower of graphene can be understood quantitatively with a very simple model of screening in the semiclassical limit. We can calcu late the energy dependent scattering time for this model exactly. We then consider acoustic phonon scattering which might be the operative scattering mechanism in free standing films, and predict that the thermopower will be linear in any induced gap in the system. Further, the thermopower peaks at the same value of chemical potential (tunable by gate voltage) independent of the gap. Finally, we show that in the semiclassical approximation, the thermopower in a magnetic field saturates at high field to a value which can be calculated exactly and is independent of the details of the scattering. This effect might be observable experimentally.
30$^{circ}$ twisted bilayer graphene demonstrates the quasicrystalline electronic states with 12-fold symmetry. These states are however far away from the Fermi level, which makes conventional Dirac fermion behavior dominating the low energy spectrum in this system. By using tight-binding approximation, we study the effect of external pressure and electric field on the quasicrystalline electronic states. Our results show that by applying the pressure perpendicular to graphene plane one can push the quasicrystalline electronic states towards the Fermi level. Then, the electron or hole doping of the order of $sim$ $4times10^{14}$ $cm^{-2}$ is sufficient for the coincidence of the Fermi level with these quasicrystalline states. Moreover, our study indicates that applying the electric field perpendicular to the graphene plane can destroy the 12-fold symmetry of these states and break the energy degeneracy of the 12-wave states, and it is easier to reach this in the conduction band than in the valence band. Importantly, the application of the pressure can recover the 12-fold symmetry of these states to some extent against the electric field. We propose a hybridization picture which can explain all these phenomena.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا