ﻻ يوجد ملخص باللغة العربية
We demonstrate magnetic switching between two $360^circ$ domain wall vortex states in cobalt nanorings, which are candidate magnetic states for robust and low power MRAM devices. These $360^circ$ domain wall (DW) or twisted onion states can have clockwise or counterclockwise circulation, the two states for data storage. Reliable switching between the states is necessary for any realistic device. We accomplish this switching by applying a circular Oersted field created by passing current through a metal atomic force microscope tip placed at the center of the ring. After initializing in an onion state, we rotate the DWs to one side of the ring by passing a current through the center, and can switch between the two twisted states by reversing the current, causing the DWs to split and meet again on the opposite side of the ring. A larger current will annihilate the DWs and create a perfect vortex state in the rings.
We theoretically study a ferrimagnetic domain-wall motion driven by a rotating magnetic field. We find that, depending on the magnitude and the frequency of the rotating field, the dynamics of a ferrimagnetic domain wall can be classified into two re
Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field witho
Controllable artificial pinning is indispensable in numerous domain-wall (DW) devices, such as memory, sensor, logic gate, and neuromorphic computing hardware. The high-accuracy determination of the effective spring constant of the pinning potential,
Topological modes in one- and two-dimensional systems have been proposed for numerous applications utilizing their exotic electronic responses. The zero-energy, topologically protected end modes can be realized in the Su-Schrieffer-Heeger (SSH) model
We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with write error r