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We report on far infrared measurements on Zn and Si doped crystals of the spin-Peierls compound CuGeO3. Zn doping has the effect of introducing several new absorption lines, polarized in the ab-plane, between 5 and 55 cm-1. The intensity of the absorption grows with Zn concentration but saturates above 2% Zn. One line at 10 cm-1 loses intensity above 4K, and a second line at 20 cm-1 is absent at low temperatures but grows to peak at about 40K in agreement with a three level model with two excited states 10 and 30 cm-1 above the ground state. As the doping is increased these lines broaden, and a temperature independent absorption developes over the entire range from 5 to 55 cm-1. These features are magnetic field independent up to 16T and are absent in Si doped samples. We suggest the new absorption is due to localized lattice modes of the zinc ion and the surrounding GeO4 tetrahedra.
We investigated the far- and mid-infrared reflectivity (20-6000 wavenumber) of several pure and doped CuGeO3 single crystals. The b-axis and c-axis optical response is presented for different temperatures between 4 K and 300 K. Moreover, a full group
We investigated in detail the optical properties of several Cu(1-delta)Mg(delta)GeO3 (with delta=0,0.01), and CuGe(1-x)B(x)O3 with B=Si (x=0,0.007,0.05,0.1), and Al (x=0,0.01) single crystals, in the frequency range 20-32000 cm^-1. We report temperat
Using high frequency (up to 450 GHz) ESR and low temperature specific heat measurements we find that insertion of 1% Fe and 2% Co damps spin-Peierls and Neel transitions and for T<30K gives rise to onset of a quantum critical behaviour characteristic for a random dimer Griffiths phase.
We investigated the infrared reflectivity of several Mg- and Si-substituted CuGeO3 single crystals. The temperature dependent b-axis and c-axis optical response is reported. For T<Tsp we detected the activation of zone-boundary phonons along the b ax
Infrared spectroscopy, especially for molecular vibrations in the fingerprint region between 600 and 1500 cm-1, is a powerful characterization method for bulk materials. However, molecular fingerprinting at the nanoscale level still remains a signifi