اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSurface-electronic structure of La(0001) and Lu(0001)
79
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Most spectroscopic methods for studying the electronic structure of metal surfaces have the disadvantage that either only occupied or only unoccupied states can be probed, and the signal is cut at the Fermi edge. This leads to significant uncertainties, when states are very close to the Fermi level. By performing low-temperature scanning tunneling spectroscopy and ab initio calculations, we study the surface-electronic structure of La(0001) and Lu(0001), and demonstrate that in this way detailed information on the surface-electronic structure very close to the Fermi energy can be derived with high accuracy.
قيم البحث
اقرأ أيضاً
Interfaces of sapphire are of technological relevance as sapphire is used as a substrate in electronics, lasers, and Josephson junctions for quantum devices. In addition, its surface is potentially useful in catalysis. Using first principles calculat
ions, we show that, unlike bulk sapphire which has inversion symmetry, the (0001) sapphire surface is piezoelectric. The inherent broken symmetry at the surface leads to a surface dipole and a significant response to imposed strain: the magnitude of the surface piezoelectricity is comparable to that of bulk piezoelectrics.
Transition metal surfaces catalyse a broad range of thermally-activated reactions involving carbon-containing-species -- from atomic carbon to small hydrocarbons or organic molecules, and polymers. These reactions yield well-separated phases, for ins
tance graphene and the metal surface, or, on the contrary, alloyed phases, such as metal carbides. Here, we investigate carbon phases on a rhenium (0001) surface, where the former kind of phase can transform into the latter. We find that this transformation occurs with increasing annealing time, which is hence not suitable to increase the quality of graphene. Our scanning tunneling spectroscopy and reflection high-energy electron diffraction analysis reveal that repeated short annealing cycles are best suited to increase the lateral extension of the structurally coherent graphene domains. Using the same techniques and with the support of density functional theory calculations, we next unveil, in real space, the symmetry of the many variants (two six-fold families) of a rhenium surface carbide observed with diffraction since the 1970s, and finally propose models of the atomic details. One of these models, which nicely matches the microscopy observations, consists of parallel rows of eight aligned carbon trimers with a so-called $(7timessqrt{mathrm{19}})$ unit cell with respect to Re(0001).
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructure
s. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semi-flat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.
We study the electronic structure of the Re(0001) surface by means of ab-initio techniques based on the Fully Relativistic (FR) Density Functional Theory (DFT) and the Projector Augmented-Wave (PAW) method. We identify the main surface states and res
onances and study in detail their energy dispersion along the main symmetry lines of the SBZ. Moreover, we discuss the effect of spin-orbit coupling on the energy splittings and the spin-polarization of the main surface states and resonances. Whenever possible, we compare the results with previously studied heavy metals surfaces. We find empty resonances, located below a gap similar to the L-gap of the (111) fcc surfaces, that have a downward dispersion and cross the Fermi level, similarly to the recently studied Os(0001) surface. Their spin polarization at the Fermi level is similar to that predicted by the Rashba model, but the usual level crossing at $bar{Gamma}$ is not found with our slab thickness. Moreover, for selected states, we follow the spin polarization along the high symmetry lines, discussing its behavior with respect to ${bf k}_{parallel}$, the wave-vector parallel to the surface.
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band
states of MnAs and its changes due to increase of the layer thickness were revealed.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
