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تسجيل مستخدم جديدResonance Anomalous Surface X-ray Scattering
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Resonance anomalous surface x-ray scattering (RASXS) technique was applied to electrochemical interface studies. It was used to determine the chemical states of electrochemically formed anodic oxide monolayers on platinum surface. It is shown that RASXS exhibits strong polarization dependence when the surface is significantly modified. The polarization dependence is demonstrated for three examples; anodic oxide formation, sulfate adsorption, and CO adsorption on platinum surfaces. s- and p- polarization RASXS data were simulated with the latest version of ab initio multiple scattering calculations (FEFF8.2). Elementary theoretical considerations are also presented for the origin of the polarization dependence in RASXS.
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Polarization dependence of resonant anomalous surface x-ray scattering (RASXS) was studied for interfaces buried in electrolytes or in high-pressure gas. We demonstrate that RASXS exhibits strong polarization dependence when the surface is only sligh
tly modified by adsorption of light elements such as carbon monoxide on platinum surfaces. s- and p-polarization RASXS data were simulated with the latest version of ab initio multiple scattering calculations (FEFF8.2). Elementary considerations are additionally presented for the origin of the polarization dependence in RASXS.
X-ray scattering is one of the primary tools to determine crystallographic configuration with atomic accuracy. However, the measurement of ultrafast structural dynamics in monolayer crystals remains a long-standing challenge due to a significant redu
ction of diffraction volume and complexity of data analysis, prohibiting the application of ultrafast x-ray scattering to study nonequilibrium structural properties at the two-dimensional limit. Here, we demonstrate femtosecond surface x-ray diffraction in combination with crystallographic model-refinement calculations to quantify the ultrafast structural dynamics of monolayer WSe$_2$ crystals supported on a substrate. We found the absorbed optical photon energy is preferably coupled to the in-plane lattice vibrations within 2 picoseconds while the out-of-plane lattice vibration amplitude remains unchanged during the first 10 picoseconds. The model-assisted fitting suggests an asymmetric intralayer spacing change upon excitation. The observed nonequilibrium anisotropic structural dynamics in two-dimensional materials agrees with first-principles nonadiabatic modeling in both real and momentum space, marking the distinct structural dynamics of monolayer crystals from their bulk counterparts. The demonstrated methods unlock the benefit of surface sensitive x-ray scattering to quantitatively measure ultrafast structural dynamics in atomically thin materials and across interfaces.
We present the first resonant x-ray reflectivity measurements from a liquid surface. The surface structure of the liquid Hg-Au alloy system just beyond the solubility limit of 0.14at% Au in Hg had previously been shown to exhibit a unique surface pha
se characterized by a low-density surface region with a complicated temperature dependence. In this paper we present reflectivity measurements near the Au LIII edge, for 0.2at% Au in Hg at room temperature. The data are consistent with a concentration of Au in the surface region that can be no larger than about 30at%. These results rule out previous suggestions that pure Au layers segregate at the alloy surface.
The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to experimentally ide
ntify which step has the A or B structure, it has not been possible to determine which has faster adatom attachment kinetics. Here we show that in situ microbeam surface X-ray scattering can determine whether A or B steps have faster kinetics under specific growth conditions. We demonstrate this for organo-metallic vapor phase epitaxy of (0001) GaN. X-ray measurements performed during growth find that the average width of terraces above A steps increases with growth rate, indicating that attachment rate constants are higher for A steps, in contrast to most predictions. Our results have direct implications for understanding the atomic-scale mechanisms of GaN growth and can be applied to a wide variety of related crystals.
We have examined whether the Co ions crystallographically substitute on the Ti sites in rutile and anatase Ti_{1-x}$Co$_{x}$O$_{2-delta}$ thin films that exhibit room-temperature ferromagnetism. Intensities of the x-ray Bragg reflection from the film
s were measured around the $K$-absorption-edge of Co. If the Co ions randomly substitute on the Ti sites, the intensity should exhibit an anomaly due to the anomalous dispersion of the atomic scattering factor of Co. However, none of the anatase and rutile samples did exhibit an anomaly, unambiguously showing that the Co ions in Ti$_{1-x}$Co$_{x}$O$_{2-delta}$ are not exactly located at the Ti sites of TiO$_2$. The absence of the anomaly is probably caused by a significant deformation of the local structure around Co due to the oxygen vacancy. We have applied the same method to paramagnetic Zn$_{1-x}$Co$_{x}$O thin films and obtained direct evidence that the Co ions are indeed substituted on the Zn sites.
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