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We show for the system La1-xCexCoO3 (0.1 <= x <= 0.4) that it is possible to synthesize electron-doped cobaltites by the growth of epitaxial thin films. For La1-xCexCoO3, ferromagnetic order is observed within the entire doping range (with the maximum of the Curie temperature, Tc, at x ca. 0.3), resulting in a magnetic phase diagram similar to that of hole-doped lanthanum cobaltites. The measured spin values strongly suggest an intermediate-spin state of the Co ions which has been also found in the hole-doped system. In contrast to the hole-doped material, however, where Tc is well above 200 K, we observe a strong suppression of the maximum Tc to about 22 K. This is likely to be caused by a considerable decrease of the Co3d - O2p hybridization. The observed intriguing magnetic properties are in agreement with previously reported theoretical results.
Low as well as high-temperature electron and x-ray diffraction studies have been carried out on a rare-earth free B-site disordered electron-doped manganite SrMn0.875.Mo0.125O3-{delta} in the temperature range of 83K to 637K. These studies reveal the
(La1-xSrx)(Zn1-yMny)AsO is a two dimensional diluted ferromagnetic semiconductor that has the advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into the parent semiconductor LaZnAsO introduces hole car
Using first principle calculations we showed that the Curie temperature of manganites thin films can be increased by far more than an order of magnitude by applying appropriate strains. Our main breakthrough is that the control of the orbital orderin
We present a comparative, theoretical study of the doping dependence of the critical temperature $T_C$ of the ferromagnetic insulator-metal transition in Gd-doped and O-deficient EuO, respectively. The strong $T_C$ enhancement in Eu$_{1-x}$Gd$_x$O is
CaCo2As2 is a unique itinerant system having strong magnetic frustration. Here we report the effect of electron doping on the physical properties resulting from Ni substitutions for Co. The A-type antiferromagnetic transition temperature TN = 52 K fo