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We investigate the applicability of spin polarization measurements using Andreev reflection in a point contact geometry in heavily doped dilute magnetic semiconductors, such as (Ga,Mn)As. While we observe conventional Andreev reflection in non-magnetic (Ga,Be)As epilayers, our measurements indicate that in ferromagnetic (Ga,Mn)As epilayers with comparable hole concentration the conductance spectra can only be adequately described by a broadened density of states and a reduced superconducting gap. We suggest that these pair-breaking effects stem from inelastic scattering in the metallic impurity band of (Ga,Mn)As and can be explained by introducing a finite quasiparticle lifetime or a higher effective temperature. For (Ga,Mn)As with 8% Mn concentration and 140 K Curie temperature we evaluate the spin polarization to be 83+/-17%. PACS numbers: 72.25.Dc,72.25.Mk,74.45.+c
We consider the phenomenon of the Andreev reflection of hadrons at the interface between hadronic and color superconducting phases, which are expected to appear in the neutron star interior. Here, hadrons are defined as a superposition of constituent
In this letter we address the question of the phenomena of Andreev reflection between the cold quark-gluon plasma phase and CFL color superconductor. We show that there are two different types of reflections connected to the structure of the CFL phas
Using the time-dependent density-matrix renormalization group (tDMRG), we study the time evolution of electron wave packets in one-dimensional (1D) metal-superconductor heterostructures. The results show Andreev reflection at the interface, as expect
The noncentrosymmetric superconductor Re$_{24}$Ti$_{5}$, a time-reversal symmetry (TRS) breaking candidate with $T_c = 6$,K, was studied by means of muon-spin rotation/relaxation ($mu$SR) and tunnel-diode oscillator (TDO) techniques. At a macroscopic
We report the effect of oxygen pressure during growth ($P_{O_{2}}$) on the electronic and magnetic properties of PrAlO$_3$ films grown on $rm TiO_{2}$-terminated SrTiO$_3$ substrates. Resistivity measurements show an increase in the sheet resistance