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We report the effect of oxygen pressure during growth ($P_{O_{2}}$) on the electronic and magnetic properties of PrAlO$_3$ films grown on $rm TiO_{2}$-terminated SrTiO$_3$ substrates. Resistivity measurements show an increase in the sheet resistance as $P_{O_{2}}$ is increased. The temperature dependence of the sheet resistance at low temperatures is consistent with Kondo theory for $P_{O_{2}} ge 10^{-5}$ torr. Hall effect data exhibit a complex temperature dependence that suggests a compensated carrier density. We observe behavior consistent with two different types of carriers at interfaces grown at $P_{O_{2}} ge 10^{-4}$ torr. For these interfaces, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields. Positive high MR values are associated with samples where a fraction of carriers are derived from oxygen vacancies. Analysis of the MR data permitted the extraction of the SO interaction critical field ( e.g. $ H_{SO}=$1.25 T for $P_{O_{2}}=10^{-5}$ torr). The weak anti-localization effect due to a strong SO interaction becomes smaller for higher $P_{O_{2}}$ grown samples, where MR values are dominated by the Kondo effect, particularly at high magnetic fields.
Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3
The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here
The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective ban
We investigated the electronic structure of the SrTiO$_3$/LaAlO$_3$ superlattice (SL) by resonant soft x-ray scattering. The (003) peak, which is forbidden for our ideal SL structure, was observed at all photon energies, indicating reconstruction at
Measurements of magneto-thermopower (S(H, T)) of interfacial delta doped LaTiO$_3$/SrTiO$_3$ (LTO/STO) heterostructure by an iso-structural antiferromagnetic perovskite LaCrO$_3$ are reported. The thermoelectric power of the pure LTO/STO interface at