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The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic states difficult. We suggest that finite-size segments can show a fast switching if collective reversal of the spins is taken into account. This mechanism gives rise at low temperatures to a scaling law for the dynamic susceptibility that has been experimentally observed for the dilute molecular chain Co(hfac)2NitPhOMe. These results suggest a possible way of engineering nanowires for fast switching of the magnetization.
Through numerical solution of the time-dependent Schrodinger equation, we demonstrate that magnetic chains with uniaxial anisotropy support stable structures, separating ferromagnetic domains of opposite magnetization. These structures, domain walls
The interaction between a spin polarized dc electrical current and spin wave modes of a cylindrical nanowire is investigated in this report. We found that close to the critical current, the uniform mode is suppressed, while the edge mode starts to pr
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin tran
Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and
The exploitation of the spin in charge-based systems is opening revolutionary opportunities for device architecture. Surprisingly, room temperature electrical transport through magnetic nanowires is still an unresolved issue. Here, we show that ferro