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تسجيل مستخدم جديدTransport properties in CeOs$_{4}$Sb$_{12}$: Possibility of the ground state being semiconducting
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We have measured both magnetoresistance and Hall effect in CeOs$_4$Sb$_{12}$ to clarify the large resistivity state ascribed to the Kondo insulating one and the origin of the phase transition near 0.9 K reported in the specific heat measurement. We found unusual temperature ($T$) dependence both in the electrical resistivity $rhosim T^{-1/2}$ and the Hall coefficient $R_{rm H}sim T^{rm -1}$ over the wide temperature range of about two order of magnitude below $sim30$ K, which can be explained as a combined effect of the temperature dependences of carrier density and carrier scattering by spin fluctuation. An anomaly related with the phase transition has been clearly observed in the transport properties, from which the $H-T$ phase diagram is determined up to 14 T. Taking into account the small entropy change, the phase transition is most probably the spin density wave one. Both the electrical resistivity and Hall resistivity at 0.3 K is largely suppressed about an order of magnitude by magnetic fields above $sim3$ T, suggesting a drastic change of electronic structure and a suppression of spin fluctuations under magnetic fields.
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We have measured the electrical resistivity, thermoelectric power, Hall coefficient, and magnetoresistance (MR) on single crystals of PrOs$_{4}$Sb$_{12}$, LaOs$_{4}$Sb$_{12}$ and NdOs$_{4}$Sb$_{12}$. All the transport properties in PrOs$_{4}$Sb$_{12}
$ are similar to those in LaOs$_{4}$Sb$_{12}$ and NdOs$_{4}$Sb$_{12}$ at high temperatures, indicating the localized character of 4$f$-electrons. The transverse MR both in LaOs$_{4}$Sb$_{12}$ and PrOs$_{4}$Sb$_{12}$ tends to saturate for wide field directions, indicating these compounds to be uncompensated metals with no open orbit. We have determined the phase diagram of the field induced ordered phase by the MR measurement for all the principle field directions, which indicates an unambiguous evidence for the $Gamma_{rm 1}$ singlet crystalline electric field ground state.
Anomalous metal-insulator transition observed in filled skutterudite CeOs$_4$Sb$_{12}$ is investigated by constructing the effective tight-binding model with the Coulomb repulsion between f electrons. By using the mean field approximation, magnetic s
usceptibilities are calculated and the phase diagram is obtained. When the band structure has a semimetallic character with small electron and hole pockets at $Gamma$ and H points, a spin density wave transition with the ordering vector $mathbf{Q}=(1,0,0)$ occurs due to the nesting property of the Fermi surfaces. Magnetic field enhances this phase in accord with the experiments.
MHz conductivity, torque magnetometer and magnetization measurements are reported on single crystals of CeOs$_4$Sb$_{12}$ and NdOs$_4$Sb$_{12}$ using temperatures down to 0.5~K and magnetic fields of up to 60~tesla. The field-orientation dependence o
f the de Haas-van Alphen and Shubnikov-de Haas oscillations is deduced by rotating the samples about the $[010]$ and $[0bar{1}1]$ directions. The results indicate that NdOs$_4$Sb$_{12}$ has a similar Fermi surface topology to that of the unusual superconductor PrOs$_4$Sb$_{12}$, but with significantly smaller effective masses, supporting the importance of local phonon modes in contributing to the low-temperature heat capacity of NdOs$_4$Sb$_{12}$. By contrast, CeOs$_4$Sb$_{12}$ undergoes a field-induced transition from an unusual semimetal into a high-field, high-temperature state characterized by a single, almost spherical Fermi-surface section. The behavior of the phase boundary and comparisons with models of the bandstructure lead us to propose that the field-induced phase transition in CeOs$_4$Sb$_{12}$ is similar in origin to the well-known $alpha-gamma$ transition in Ce and its alloys.
The phase diagram of the filled skutterudite CeOs$_4$Sb$_{12}$ has been mapped in fields $H$ of up to 60 T and temperatures $T$ down to 0.5 K using resistivity, magnetostriction, and MHz conductivity. The valence transition separating the semimetalli
c, low-$H$, low-$T$, $cal{L}$ phase from the metallic high-$H$, high-$T$ $cal{H}$ phase exhibits a very unusual, wedge-shaped phase boundary, with a non-monotonic gradient alternating between positive and negative. This is quite different from the text-book elliptical phase boundary usually followed by valence transitions. Analysis of Shubnikov-de Haas oscillations within the $cal{H}$ phase reveals an effective mass that increases as $H$ drops toward the $cal{H-L}$ phase boundary, suggesting proximity to a quantum-critical point. The associated magnetic fluctuations may be responsible for the anomalous $H,T$ dependence of the valence transition at high $H$, whereas the low$-H$, high$-T$ portion of the phase boundary may rather be associated with the proximity of CeOs$_4$Sb$_{12}$ to a topological semimetal phase induced by uniaxial stress.
X-ray diffraction, electrical resistivity, magnetization, specific heat, and thermoelectric power measurements are presented for single crystals of the new filled skutterudite compound {CeOsAs}, which reveal phenomena that are associated with f - ele
ctron - conduction electron hybridization. Valence fluctuations or Kondo behavior dominates the physics down to $T$ $sim$ 135 K. The correlated electron behavior is manifested at low temperatures as a hybridization gap insulating state. The small energy gap $Delta$$_1$/k$_B$ $sim$ 73 K, taken from fits to electrical resistivity data, correlates with the evolution of a weakly magnetic or nonmagnetic ground state, which is evident in the magnetization data below a coherence temperature $T$$_{coh}$ $sim$ 45 K. Additionally, the low temperature electronic specific heat coefficient is small, $gamma$ $sim$ 19 mJ/mol K$^2$. Some results for the nonmagnetic analogue compound {LaOsAs} are also presented for comparison purposes.
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