ترغب بنشر مسار تعليمي؟ اضغط هنا

Influence of voltmeter input impedance on quantum Hall effect measurements

74   0   0.0 ( 0 )
 نشر من قبل Frank Fischer
 تاريخ النشر 2004
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We report on the influence of voltmeters on measurements of the longitudinal resistance in the quantum Hall effect regime. We show that for typical input resistances for standard digital lock-in amplifiers the longitudinal resistance can show a non-zero minimum which might be mistaken for parallel conduction in the doping layer. In contrast to a real parallel conduction the effect disappears when either the current source and ground contact are swapped or the polarity of the B-field is changed. We discuss the influence of input capacitances and stray capacitances on the measurement. The data demonstrates the influence of the voltmeter input impedance on the longitudinal resistance measurement.



قيم البحث

اقرأ أيضاً

231 - C.X.Zhang , M.A.Zubkov 2020
Conductivity of Integer Quantum Hall Effect (IQHE) may be expressed as the topological invariant composed of the two - point Green function. Such a topological invariant is known both for the case of homogeneous systems with intrinsic Anomalous Quant um Hall Effect (AQHE) and for the case of IQHE in the inhomogeneous systems. In the latter case we may speak, for example, of the AQHE in the presence of elastic deformations and of the IQHE in presence of magnetic field. The topological invariant for the general case of inhomogeneous systems is expressed through the Wigner transformed Green functions and contains Moyal product. When it is reduced to the expression for the IQHE in the homogeneous systems the Moyal product is reduced to the ordinary one while the Wigner transformed Green function (defined in phase space) is reduced to the Green function in momentum space. Originally the mentioned above topological representation has been derived for the non - interacting systems. We demonstrate that in a wide range of different cases in the presence of interactions the Hall conductivity is given by the same expression, in which the noninteracting two - point Green function is substituted by the complete two - point Green function with the interactions taken into account. Several types of interactions are considered including the contact four - fermion interactions, Yukawa and Coulomb interactions. We present the complete proof of this statement up to the two loops, and argue that the similar result remains to all orders of perturbation theory. It is based on the incorporation of Wigner - Weyl calculus to the perturbation theory. We, therefore, formulate Feynmann rules of diagram technique in terms of the Wigner transformed propagators.
We study the influence of the phase relaxation process on Hall resistance and spin Hall current of a mesoscopic two-dimensional (2D) four-terminal Hall cross-bar with or without Rashba spin-orbit interaction (SOI) in a perpendicular uniform magnetic field. We find that the plateaus of the Hall resistance with even number of edge states can survive for very strong phase relaxation when the system size becomes much longer than the phase coherence length. On the other hand, the odd integer Hall resistance plateaus arising from the SOI are easily destroyed by the weak phase relaxation during the competition between the magnetic field and the SOI which delocalize the edge states. In addition, we have also studied the transverse spin Hall current and found that it exhibits resonant behavior whenever the Fermi level crosses the Landau band of the system. The phase relaxation process weakens the resonant spin Hall current and enhances the non-resonant spin Hall current.
Harmonic Hall voltage measurements are a wide-spread quantitative technique for the measurement of spin-orbit induced effective fields in heavy-metal / ferromagnet heterostructures. In the vicinity of the voltage pickup lines in the Hall bar, the cur rent is inhomogeneous, which leads to a hitherto not quantified reduction of the effective fields and derived quantities, such as the spin Hall angle or the spin Hall conductivity. Here we present a thorough analysis of the influence of the aspect ratio of the voltage pickup lines to current channel widths on the apparent spin Hall angle. Experiments were performed with Hall bars with a broad range of aspect ratios and a substantial reduction of the apparent spin Hall angle is already seen in Hall crosses with an aspect ratio of 1:1. Our experimental results are confirmed by finite-element simulations of the current flow.
264 - I. Skachko , X. Du , F. Duerr 2009
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic samples. New quantized states are found at integer Landau level fillings outside the sequence 2,6,10.., as well as at a fractional filling u=1/3. Their presence is revealed by plateaus in the two-terminal conductance which appear in magnetic fields as low as 2 Tesla at low temperatures and persist up to 20 Kelvin in 12 Tesla. The excitation gaps, extracted from the data with the help of a theoretical model, are found to be significantly larger than in GaAs based electron systems.
Magnetoresistance measurements have been performed on a gated two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear features of the quantum Hall effect were observed des pite the proximity of the QDs layer to the 2DES. However, the magnetoresistance ($rho_{xx}$) and Hall resistance ($rho_{xy}$) are suppressed significantly in the magnetic field range of filling factor $ u<1$ when a positive voltage is applied to the front gate. The influence of the charge state in QDs was observed on the transport properties of the nearby 2DES only in the field range of $ u < 1$. It is proposed that the anomalous suppression of $rho_{xx}$ and $rho_{xy}$ is related to spin excitation, which is induced by spin-flip processes involving electrons in the QDs and the 2DES.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا