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Spin-polarized currents play a key role in spintronics. Recently, it has been found that antiferromagnets with a non-spin-degenerate band structure can efficiently spin-polarize electric currents, even though their net magnetization is zero. Among the antiferromagnetic metals with magnetic space group symmetry supporting this functionality, the noncollinear antiferromagnetic antiperovskites ANMn$_3$ (A = Ga, Ni, Sn, and Pt) are especially promising. This is due to their high Neel temperatures and a good lattice match to perovskite oxide substrates, offering possibilities of high structural quality heterostructures based on these materials. Here, we investigate the spin polarization of antiferromagnetic ANMn$_3$ metals using first-principles density functional theory calculations. We find that the spin polarization of the longitudinal currents in these materials is comparable to that in widely used ferromagnetic metals, and thus can be exploited in magnetic tunnel junctions and spin transfer torque devices. Moreover, for certain film growth directions, the out-of-plane transverse spin currents with a giant charge-to-spin conversion efficiency can be achieved, implying that the ANMn$_3$ antiperovskites can be used as efficient spin sources. These properties make ANMn$_3$ compounds promising for application in spintronics.
We propose a new type of spin-valley locking (SVL), named $textit{C}$-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley
Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states cou
Non-collinear antiferromagnets exhibits richer magneto-transport properties due to the topologically nontrivial spin structure they possess compared to conventional nonmagnetic materials, which allows us to manipulate the charge-spin conversion more
We investigate the impact of pinned antiferromagnetic order on the decoherence of spin current in polycrystalline IrMn. In NiFe/Cu/IrMn/CoFe multilayers, we coherently pump an electronic spin current from NiFe into IrMn, whose antiferromagnetic order
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such phenomena