ﻻ يوجد ملخص باللغة العربية
In-volume ultrafast laser direct writing of silicon is generally limited by strong nonlinear propagation effects preventing the initiation of modifications. By employing a triple-optimization procedure in the spectral, temporal and spatial domains, we demonstrate that modifications can be repeatably produced inside silicon. Our approach relies on irradiation at $approx 2$-$mu$m wavelength with temporally-distorted femtosecond pulses. These pulses are focused in a way that spherical aberrations of different origins counterbalance, as predicted by point spread function analyses and in good agreement with nonlinear propagation simulations. We also establish the laws governing modification growth on a pulse-to-pulse basis, which allows us to demonstrate transverse inscription inside silicon with various line morphologies depending on the irradiation conditions. We finally show that the production of single-pulse repeatable modifications is a necessary condition for reliable transverse inscription inside silicon.
Femtosecond laser writing is applied to form Bragg grating waveguides in the diamond bulk. Type II waveguides are integrated with a single pulse point-by-point periodic laser modification positioned towards the edge of the waveguide core. These photo
Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser l
Understanding and manipulation of the laser processing quality during the ablation of solids have crucial importance from fundamental and industrial perspectives. Here we have studied the effect of external magnetic field on the micro-material proces
Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode distributed fe
We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide splitter r