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Muon spin rotation/relaxation measurements were performed to investigate magnetic properties of FeSe$_{1-x}$S$_x$ thin films on LaAlO$_3$. A drastic decrease of the initial asymmetry was observed together with the peak structure in the temperature dependence of the relaxation rate of muon spins almost at the same temperature where kink anomalies were observed in the temperature dependent resistivity. With increasing S content, the anomaly temperature increased and the magnetic fluctuations at the lowest temperature were suppressed. These results show that the S substitution induces magnetism at low temperatures in FeSe$_{1-x}$S$_x$ thin films. Although the behaviors of the magnetic and nematic phases in FeSe films towards chemical pressure by S substitution are similar to those for bulk FeSe towards hydrostatic pressure, the behavior of $T_{mathrm c}$ is significantly different between these systems. Our results demonstrate that the detailed comparative investigation among physical and chemical pressure effects is essentially important to understand the interplay of the magnetism, the nematicity and the superconductivity in iron chalcogenides.
The Pr-rich end of the alloy series Pr$_{1-x}$Nd$_x$Os$_4$Sb$_{12}$ has been studied using muon spin rotation and relaxation. The end compound PrOs$_4$Sb$_{12}$ is an unconventional heavy-fermion superconductor, which exhibits a spontaneous magnetic
The recent observation of superconductivity with critical temperatures up to 55 K in the FeAs based pnictide compounds marks the first discovery of a non copper-oxide based layered high-Tc superconductor (HTSC) [1-3]. It has raised the suspicion that
The effect of pressure on the copper and praseodymium magnetic order in the system Nd(1-x)$Pr(x)Ba2Cu3$O7 with x=0.3, 0.5, 0.7, and 1 was investigated by means of the muon spin rotation (muSR) technique. It was found that the effect of pressure on th
In this study, we investigated the gate voltage dependence of $T_{mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{mathrm c}^{mathrm {zero}}$ value of the etched FeSe films with a lower gat
We report the evolution of nematic fluctuations in FeSe$_{1-x}$S$_x$ single crystals as a function of Sulfur content $x$ across the nematic quantum critical point (QCP) $x_csim$ 0.17 via Raman scattering. The Raman spectra in the $B_{1g}$ nematic cha