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In this study, we investigated the gate voltage dependence of $T_{mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{mathrm c}^{mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.
Among the recently discovered iron-based superconductors, ultrathin films of FeSe grown on SrTiO3 substrates have uniquely evolved into a high superconducting-transition-temperature (TC) material. The mechanisms for the high-TC superconductivity are
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Th
Iron selenide (FeSe) - the structurally simplest iron-based superconductor, has attracted tremendous interest in the past years. While the transition temperature (Tc) of bulk FeSe is $sim$ 8 K, it can be significantly enhanced to 40 - 50 K by various
Superconductivity develops in bulk doped SrTiO$_3$ and at the LaAlO$_3$/SrTiO$_3$ interface with a dome-shaped density dependence of the critical temperature $T_c$, despite different dimensionalities and geometries. We propose that the $T_c$ dome of
Temperature (12K $le$ T $le$ 300K) dependent extended X-ray absorption fine structure (EXAFS) studies at the Fe K edge in FeSe$_{1-x}$Te$_x$ (x = 0, 0.5 and 1.0) compounds have been carried out to understand the reasons for increase in T$_C$ upon Te