اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدOverdamped Phase Diffusion in hBN Encapsulated Graphene Josephson Junctions
75
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7K, the junctions appear non-hysteretic with respect to the switching and retrapping currents $I_C$ and $I_R$. A small non-zero resistance is observed even around zero bias current, and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.
قيم البحث
اقرأ أيضاً
The influence of fluctuations and periodical driving on temporal characteristics of short overdamped Josephson junction is analyzed. We obtain the standard deviation of the switching time in the presence of a dichotomous driving force for arbitrary n
oise intensity and in the frequency range of practical interest. For sinusoidal driving the resonant activation effect has been observed. The mean switching time and its standard deviation have a minimum as a function of driving frequency. As a consequence the optimization of the system for fast operation will simultaneously lead to minimization of timing errors.
We perform extensive analysis of graphene Josephson junctions embedded in microwave circuits. By comparing a diffusive junction at 15 mK with a ballistic one at 15 mK and 1 K, we are able to reconstruct the current-phase relation.
We fabricate superconductor-graphene-superconductor Josephson junctions with superconducting regions made of lead (Pb). The critical current through grapehene may be modulated by external magnetic field; the resulting Fraunhofer interference pattern
shows several periods of oscillations, indicating that the junction is uniform. Deviations from the perfect Fraunhofer pattern are observed, and their cause is explained by a simulation that takes into account the sample design.
We study the influence of superconducting correlations on the electronic specific heat in a diffusive superconductor-normal metal-superconductor Josephson junction. We present a description of this system in the framework of the diffusive-limit Green
s function theory, taking into account finite temperatures, phase difference as well as junction parameters. We find that proximity effect may lead to a substantial deviation of the specific heat as compared to that in the normal state, and that it can be largely tuned in magnitude by changing the phase difference between the superconductors. A measurement setup to confirm these predictions is also suggested.
Short ballistic graphene Josephson junctions sustain superconducting current with a non-sinusoidal current-phase relation up to a critical current threshold. The current-phase relation, arising from proximitized superconductivity, is gate-voltage tun
able and exhibits peculiar skewness observed in high quality graphene superconductors heterostructures with clean interfaces. These properties make graphene Josephson junctions promising sensitive quantum probes of microscopic fluctuations underlying transport in two-dimensions. We show that the power spectrum of the critical current fluctuations has a characteristic $1/f$ dependence on frequency, $f$, probing two points and higher correlations of carrier density fluctuations of the graphene channel induced by carrier traps in the nearby substrate. Tunability with the Fermi level, close to and far from the charge neutrality point, and temperature dependence of the noise amplitude are clear fingerprints of the underlying material-inherent processes. Our results suggest a roadmap for the analysis of decoherence sources in the implementation of coherent devices by hybrid nanostructures.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
