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Antiferromagnets offer remarkable promise for future spintronics devices, where antiferromagnetic order is exploited to encode information. The control and understanding of antiferromagnetic domain walls (DWs) - the interfaces between domains with differing order parameter orientations - is a key ingredient for advancing such antiferromagnetic spintronics technologies. However, studies of the intrinsic mechanics of individual antiferromagnetic DWs remain elusive since they require sufficiently pure materials and suitable experimental approaches to address DWs on the nanoscale. Here we nucleate isolated, 180{deg} DWs in a single-crystal of Cr$_2$O$_3$, a prototypical collinear magnetoelectric antiferromagnet, and study their interaction with topographic features fabricated on the sample. We demonstrate DW manipulation through the resulting, engineered energy landscape and show that the observed interaction is governed by the DWs elastic properties. Our results advance the understanding of DW mechanics in antiferromagnets and suggest a novel, topographically defined memory architecture based on antiferromagnetic DWs.
Recent experimental studies of magnetic domain expansion under easy-axis drive fields in materials with a perpendicular magnetic anisotropy have shown that the domain wall velocity is asymmetric as a function of an external in plane magnetic field. T
We consider a domain wall in the mesoscopic quasi-one-dimensional sample (wire or stripe) of weakly anisotropic two-sublattice antiferromagnet, and estimate the probability of tunneling between two domain wall states with different chirality. Topolog
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a topological objec
We experimentally study the structure and dynamics of magnetic domains in synthetic antiferromagnets based on Co/Ru/Co films. Dramatic effects arise from the interaction among the topological defects comprising the dual domain walls in these structur
We study the influence of oxygen vacancies on the formation of charged 180$^circ$ domain walls in ferroelectric BaTiO$_3$ using first principles calculations. We show that it is favorable for vacancies to assemble in crystallographic planes, and that