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Suppression of the critical temperature in homogeneously disordered superconducting films is a consequence of the disorder-induced enhancement of Coulomb repulsion. We demonstrate that for the majority of thin films studied now this effect cannot be completely explained in the assumption of two-dimensional diffusive nature of electrons motion. The main contribution to the $T_c$ suppression arises from the correction to the electron-electron interaction constant coming from small scales of the order of the Fermi wavelength that leads to the critical temperature shift $delta T_c/T_{c0} sim - 1/k_Fl$, where $k_F$ is the Fermi momentum and $l$ is the mean free path. Thus almost for all superconducting films that follow the fermionic scenario of $T_c$ suppression with decreasing the film thickness, this effect is caused by the proximity to the three-dimensional Anderson localization threshold and is controlled by the parameter $k_F l$ rather than the sheet resistance of the film.
We numerically study the interplay between superconductivity and disorder on the graphene honeycomb lattice with on-site Hubbard attractive interactions U using a spatially inhomogeneous self-consistent Bogoliubov-de Gennes (BdG) approach. In the abs
We study the surface of a three-dimensional spin chiral $mathrm{Z}_2$ topological insulator (class CII), demonstrating the possibility of its localization. This arises through an interplay of interaction and statistically-symmetric disorder, that con
The design and fabrication of phononic crystals (PnCs) hold the key to control the propagation of heat and sound at the nanoscale. However, there is a lack of experimental studies addressing the impact of order/disorder on the phononic properties of
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the mobility was high
The time-dependent fluctuations of conductivity sigma have been studied in a two-dimensional electron system in low-mobility, small-size Si inversion layers. The noise power spectrum is ~1/f^{alpha} with alpha exhibiting a sharp jump at a certain ele