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Tin chalcogenides (SnS, SnSe, and SnTe) are found to have improved thermoelectric properties upon the reduction of their dimensionality. Here we found the tilted AA + s stacked two-dimensional (2D) SnTe bilayer as the most stable phase among several stackings as predicted by the structural optimization and phonon transport properties. The carrier mobility and relaxation time are evaluated using the deformation potential theory, which is found to be relatively high due to the high 2D elastic modulus, low deformation potential constant, and moderate effective masses. The SnTe bilayer shows a high Seebeck coefficient, high electrical conductivity, and ultralow lattice thermal conductivity. High TE figure of merit (ZT) values, as high as 4.61 along the zigzag direction, are predicted for the SnTe bilayer. These ZT values are much enhanced as compared to the bulk as well as monolayer SnTe and other 2D compounds.
We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2 based on the experimentally prepared WS2/WSe2 lateral superlattice (LS) crystal. On the basis of d
Half-Heusler compounds usually exhibit relatively higher lattice thermal conductivity that is undesirable for thermoelectric applications. Here we demonstrate by first-principles calculations and Boltzmann transport theory that the BiBaK system is an
Thermoelectric figures of merit, ZT > 0.5, have been obtained in arc-melted TiNiSn-based ingots. This promising conversion efficiency is due to a low lattice thermal conductivity, which is attributed to excess nickel in the half-Heusler structure.
Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively-powered electronic systems. The conversion efficiencies of such devices a
Thermoelectric properties of polycrystalline p-type ZrTe5 are reported in temperature (T) range 2 - 340 K. Thermoelectric power (S) is positive and reaches up to 458 uV/K at 340 K on increasing T. The value of Fermi energy 16 meV, suggests low carrie