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Sharp negative differential resistance from vibrational mode softening in molecular junctions

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 نشر من قبل Junjie Liu
 تاريخ النشر 2020
  مجال البحث فيزياء
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We unravel the critical role of vibrational mode softening in single-molecule electronic devices at high bias. Our theoretical analysis is carried out with a minimal model for molecular junctions, with mode softening arising due to quadratic electron-vibration couplings, and by developing a mean-field approach. We discover that the negative sign of the quadratic electron-vibration coupling coefficient can realize at high voltage a sharp negative differential resistance (NDR) effect with a large peak-to-valley ratio. Calculated current-voltage characteristics, obtained based on ab initio parameters for a nitro-substituted oligo(phenylene ethynylene) junction, agree very well with measurements. Our results establish that vibrational mode softening is a crucial effect at high voltage, underlying NDR, a substantial diode effect, and the breakdown of current-carrying molecular junctions.



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Introduction (2) Experimental background: Test beds (8) Theoretical approaches: A microscopic model(10) The electron-phonon coupling(14)Time and energy scales(15) Theoretical methods(19)Numerical calculations(28) Incoherent vs. coherent transpo rt (28) Inelastic tunneling spectroscopy: Experimental background(31) Theoretical considerations:the weak coupling limit(36) Theoretical considerations: moderately strong coupling(41)Comparison of approximation schemes(48)Asymmetry in IETS(51)The origin of dips in IETS signals(53)Computational approaches (56) Effects of electron-electron(e-e)interactions (63) Noise (66) Non-linear conductance phenomena (73) Heating and heat conduction: General considerations(77) Heat generation(81) Heat conduction(85) Junction temperature(88) Current induced reactions (91) Summary and outlook (91)
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