اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدBerry-Curvature Exchange Induced Anderson Localization in Large-Chern-Number Quantum Anomalous Hall Effect
346
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when the disorder strength is large enough. However, in the presence of spin-flip disorders, the localization mechanisms in these two host materials are completely distinct. For the ferromagnetic bilayer graphene with Rashba spin-orbit coupling, the QAHE with $mathcal{C}=4$ firstly enters a Berry-curvature mediated metallic phase, and then becomes localized to be Anderson insulator along with the increasing of disorder strength. While in magnetic topological insulator thin films, the QAHE with $mathcal{C=N}$ firstly enters a Berry-curvature mediated metallic phase, then transitions to another QAHE with ${mathcal{C}}={mathcal{N}}-1$ along with the increasing of disorder strength, and is finally localized to the Anderson insulator after ${mathcal{N}}-1$ cycling between the QAHE and metallic phases. For the unusual findings in the latter system, by analyzing the Berry curvature evolution, it is known that the phase transitions originate from the exchange of Berry curvature carried by conduction (valence) bands. At the end, we provide a phenomenological picture related to the topological charges to help understand the underlying physical origins of the two different phase transition mechanisms.
قيم البحث
اقرأ أيضاً
The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. W
e provide compelling theoretical evidence that the localization of a single quasiparticle of the fractional quantum Hall state at filling factor $ u=n/(2n+1)$ has a striking {it quantitative} correspondence to the localization of a single electron in the $(n+1)$th Landau level. By analogy to the dramatic experimental manifestations of Anderson localization in integer quantum Hall effect, this leads to predictions in the fractional quantum Hall regime regarding the existence of extended states at a critical energy, and the nature of the divergence of the localization length as this energy is approached. Within a mean field approximation these results can be extended to situations where a finite density of quasiparticles is present.
The quantum anomalous Hall system with Chern number 2 can be destroyed by sufficiently strong disorder. During its process towards localization, it was found that the electronic states will be directly localized to an Anderson insulator (with Chern n
umber 0), without an intermediate Hall plateau with Chern number 1. Here we investigate the topological origin of this phenomenon, by calculating the band structures and Chern numbers for disordered supercells. We find that on the route towards localization, there exists a hidden state with Chern number 1, but it is too short and too fluctuating to be practically observable. This intermediate state cannot be stabilized even after some smart design of the model and this should be a universal phenomena for insulators with high Chern numbers. By performing numerical scaling of conductances, we also plot the renormalization group flows for this transition, with Chern number 1 state as an unstable fixed point. This is distinct from known results, and can be tested by experiments and further theoretical analysis.
The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect h
as been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zero magnetic field QAH effect has so far been realized only for C = 1. Here we used molecular beam epitaxy to fabricate magnetic TI multilayers and realized the QAH effect with tunable Chern number C up to 5. The Chern number of these QAH insulators is tuned by varying the magnetic doping concentration or the thickness of the interior magnetic TI layers in the multilayer samples. A theoretical model is developed to understand our experimental observations and establish phase diagrams for QAH insulators with tunable Chern numbers. The realization of QAH insulators with high tunable Chern numbers facilitates the potential applications of dissipationless chiral edge currents in energy-efficient electronic devices and opens opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.
In recent years, it has been shown that Berry curvature monopoles and dipoles play essential roles in the anomalous Hall effect and the nonlinear Hall effect respectively. In this work, we demonstrate that Berry curvature multipoles (the higher momen
ts of Berry curvatures at the Fermi energy) can induce higher-order nonlinear anomalous Hall (NLAH) effect. Specifically, an AC Hall voltage perpendicular to the current direction emerges, where the frequency is an integer multiple of the frequency of the applied current. Importantly, by analyzing the symmetry properties of all the 3D and 2D magnetic point groups, we note that the quadrupole, hexapole and even higher Berry curvature moments can cause the leading-order frequency multiplication in certain materials. To provide concrete examples, we point out that the third-order NLAH voltage can be the leading-order Hall response in certain antiferromagnets due to Berry curvature quadrupoles, and the fourth-order NLAH voltage can be the leading response in the surface states of topological insulators induced by Berry curvature hexapoles. Our results are established by symmetry analysis, effective Hamiltonian and first-principles calculations. Other materials which support the higher-order NLAH effect are further proposed, including 2D antiferromagnets and ferromagnets, Weyl semimetals and twisted bilayer graphene near the quantum anomalous Hall phase.
Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in topological i
nsulators with Chern numbers C= 1 and 2 at very low temperatures. Here, we propose three novel two-dimensional stable kagome ferromagnets Co3Pb3S2, Co3Pb3Se2and Co3Sn3Se2that can realize QAHE with high Chern number of |C|=3. Monolayers Co3Pb3S2, Co3Pb3Se2 and Co3Sn3Se2 possess the large band gap of 70, 77 and 63 meV with Curie temperature TC of 51, 42 and 46 K, respectively. By constructing a heterostructure Co3Sn3Se2/MoS2, its TC is enhanced to 60 K and the band gap keeps about 60 meV due to the tensile strain of 2% at the interface. For the bilayer compound Co6Sn5Se4, it becomes a half-metal, with a relatively flat plateau in its anomalous Hall conductivity corresponding to |C| = 3 near the Fermi level. Our results provide new topological nontrivial systems of kagome ferromagnetic monolayers and heterostructrues possessing QAHE with high Chern number |C| = 3 and large band gaps.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
