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تسجيل مستخدم جديدToward Valley-coupled Spin Qubits
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The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectric, electrodes or contaminants from processing contribute to spin decoherence. In the recent decade, valleytronics has seen a revival due to the discovery of valley-coupled spins in monolayer transition metal dichalcogenides. Such valley-coupled spins are protected by inversion asymmetry and time-reversal symmetry and are promising candidates for robust qubits. In this report, the progress toward building such qubits is presented. Following an introduction to the key attractions in fabricating such qubits, an up-to-date brief is provided for the status of each key step, highlighting advancements made and/or outstanding work to be done. This report concludes with a perspective on future development highlighting major remaining milestones toward scalable spin-valley qubits.
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The newly discovered valley degree of freedom (DOF) in atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) offers a promising platform to explore rich nonlinear physics, such as spinor Bose-Einstein condensate (BEC) and novel
valleytronics applications. However, the critical nonlinear effect, such as valley polariton bosonic stimulation (BS), has long remained an unresolved challenge due to the generation of limited polariton ground state densities necessary to induce the stimulated scattering of polaritons in specific valleys. Here, we report, for the first time, the valley bosonic stimulation of exciton-polaritons via spin-valley locking in a WS2 monolayer microcavity. This is achieved by the resonant injection of valley polaritons at specific energy and wavevector, which allows spin-polarized polaritons to efficiently populate their ground state and induce a valley-dependent bosonic stimulation. As a result, we observe the nonlinear self-amplification of polariton emission from the valley-dependent ground state. Our finding paves the way for both fundamental study of valley polariton BEC physics and non-linear optoelectronic devices such as spin-dependent parametric oscillators and spin-lasers.
We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-
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Exciton Valley Hall effect is the spatial separation of the valley-tagged excitons in the presence of a drag force. Usually, the effect is associated with the anomalous velocity acquired by the particles due to the Berry curvature of the Bloch bands.
Here we show that the anomalous velocity plays no role in the exciton valley Hall effect, which is governed by the side-jump and skew scattering mechanisms. We develop microscopic theory of the exciton valley Hall effect in the presence of synthetic electric field and phonon drag and calculate all relevant contributions to the valley Hall current also demonstrating the cancellation of the anomalous velocity. The sensitivity of the effect to the origin of the drag force and to the scattering processes is shown. We extend the drift-diffusion model to account for the valley Hall effect and calculate the exciton density and valley polarization profiles.
The existence of spin-currents in absence of any driving external fields is commonly considered an exotic phenomenon appearing only in quantum materials, such as topological insulators. We demonstrate instead that equilibrium spin currents are a rath
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