ترغب بنشر مسار تعليمي؟ اضغط هنا

Mott transition and high-temperature crossovers at half-filling

123   0   0.0 ( 0 )
 نشر من قبل Andr\\'e-Marie Tremblay
 تاريخ النشر 2020
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The interaction-driven Mott transition in the half-filled Hubbard model is a first-order phase transition that terminates at a critical point $(T_mathrm{c},U_mathrm{c})$ in the temperature-interaction plane $T-U$. A number of crossovers occur along lines that extend for some range above $(T_mathrm{c},U_mathrm{c})$. Asymptotically close to $(T_mathrm{c},U_mathrm{c})$, these lines coalesce into the so-called Widom line. The existence of $(T_mathrm{c},U_mathrm{c})$ and of the associated crossovers becomes unclear when long-wavelength fluctuations or long-range order occur above $(T_mathrm{c},U_mathrm{c})$. We study this problem using continuous-time quantum Monte Carlo methods as impurity solvers for both Dynamical Mean-Field Theory (DMFT) and Cellular Dynamical Mean-Field Theory (CDMFT). We contrast the cases of the square lattice, where antiferromagnetic fluctuations dominate in the vicinity of the Mott transition, and the triangular lattice where they do not. The inflexion points and maxima found near the Widom line for the square lattice can serve as proxy for the triangular lattice case. But the only crossover observable in all cases at sufficiently high temperature is that associated with the opening of the Mott gap. The same physics also controls an analog crossover in the resistivity called the Quantum Widom line.

قيم البحث

اقرأ أيضاً

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the frequency- an d temperature-dependent dielectric response of the Mott insulator $kappa$-(BEDT-TTF)$_{2}$-Cu$_2$(CN)$_3$ when tuning from a quantum spin liquid into the Fermi-liquid state by applying external pressure and chemical substitution of the donor molecules. At low temperatures the coexistence region at the first-order transition leads to a strong enhancement of the quasi-static dielectric constant $epsilon_1$ when the effective correlations are tuned through the critical value. Several dynamical regimes are identified around the Mott point and vividly mapped through pronounced permittivity crossovers. All experimental trends are captured by dynamical mean-field theory of the single-band Hubbard model supplemented by percolation theory.
We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down of the di fferent solutions that occur along them. We focus on the specific issue of the debated Mott-Peierls insulator crossover and describe the systematic evolution of the electronic structure across the phase diagram. We found that at low intra-dimer hopping the emerging local magnetic moments can unbind above a characteristic singlet temperature $T^*$. Upon increasing the inter-dimer hopping subtle changes occur in the electronic structure. Notably, we find Hubbard bands of a mix character with coherent and incoherent excitations. We argue that this state is relevant for VO$_2$ and its signatures may be observed in spectroscopic studies, and possibly through pump-probe experiments.
The entanglement entropy of $ u=1/2$ and $ u=9/2$ quantum Hall states in the presence of short range disorder has been calculated by direct diagonalization. Spin polarized electrons are confined to a single Landau level and interact with long range C oulomb interaction. For $ u=1/2$ the entanglement entropy is a smooth monotonic function of disorder strength. For $ u=9/2$ the entanglement entropy is non monotonic suggestive of a solid-liquid phase transition. As a model of the transition at $ u=1/2$ free fermions with disorder in 2 dimensions were studied. Numerical evidence suggests the entanglement entropy scales as $L$ rather than the $L ln{L}$ as in the disorder free case.
The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied v oltages, the transition temperature of the MIT current jump decreases. We find a monoclinic and electronically correlated metal (MCM) phase between the abrupt current jump and the structural phase transition (SPT). After the transition from insulator to metal, a linear increase in current (or conductivity) is shown with temperature until the current becomes a constant maximum value above T_{SPT}=68^oC. The SPT is confirmed by micro-Raman spectroscopy measurements. Optical microscopy analysis reveals the absence of the local current path in micro scale in the VO_2 device. The current uniformly flows throughout the surface of the VO_2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor.
We have investigated the half-filling two-orbital Hubbard model on a triangular lattice by means of the dynamical mean-field theory (DMFT). The densities of states and optical conductivity clearly show the occurence of metal-insulating transition (MI T) at U$_{c}$, U$_{c}$=18.2, 16.8, 6.12 and 5.85 for J=0, 0.01U, U/4 and U/3, respectively. The distinct continuities of double occupation of electrons, local square moments and local susceptibility of the charge, the spin and the orbital at J > 0 suggest that the MIT is the first-order; however at J=0, the MIT is the second-order in the half-filling two-orbital Hubbard model on triangular lattices. We attribute the first-order nature of the MIT to the low symmetry of the systems with finite Hunds coupling J.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا