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The interaction-driven Mott transition in the half-filled Hubbard model is a first-order phase transition that terminates at a critical point $(T_mathrm{c},U_mathrm{c})$ in the temperature-interaction plane $T-U$. A number of crossovers occur along lines that extend for some range above $(T_mathrm{c},U_mathrm{c})$. Asymptotically close to $(T_mathrm{c},U_mathrm{c})$, these lines coalesce into the so-called Widom line. The existence of $(T_mathrm{c},U_mathrm{c})$ and of the associated crossovers becomes unclear when long-wavelength fluctuations or long-range order occur above $(T_mathrm{c},U_mathrm{c})$. We study this problem using continuous-time quantum Monte Carlo methods as impurity solvers for both Dynamical Mean-Field Theory (DMFT) and Cellular Dynamical Mean-Field Theory (CDMFT). We contrast the cases of the square lattice, where antiferromagnetic fluctuations dominate in the vicinity of the Mott transition, and the triangular lattice where they do not. The inflexion points and maxima found near the Widom line for the square lattice can serve as proxy for the triangular lattice case. But the only crossover observable in all cases at sufficiently high temperature is that associated with the opening of the Mott gap. The same physics also controls an analog crossover in the resistivity called the Quantum Widom line.
The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the frequency- an
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The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied v
We have investigated the half-filling two-orbital Hubbard model on a triangular lattice by means of the dynamical mean-field theory (DMFT). The densities of states and optical conductivity clearly show the occurence of metal-insulating transition (MI