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تسجيل مستخدم جديدTunable two-dimensional electron system at the (110) surface of SnO$_2$
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We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of $n$-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band.
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We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and SrTiO3, a transparent non-magnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled in-situ r
edox reaction between pure metallic Eu deposited at room temperature on the surface of SrTiO3, an innovative bottom-up approach that can be easily generalized to other functional oxides and scaled to applications. Additionally, we find that the resulting EuO capping layer can be tuned from paramagnetic to ferromagnetic, depending on the layer thickness. These results demonstrate that the simple, novel technique of creating 2DESs in oxides by deposition of elementary reducing agents [T. C. Rodel et al., Adv. Mater. 28, 1976 (2016)] can be extended to simultaneously produce an active, e.g. magnetic, capping layer enabling the realization and control of additional functionalities in such oxide-based 2DESs.
Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap insulators made
of transition metal oxides [1]. This finding has generated considerable efforts to clarify the underlying microscopic mechanism. Of particular interest is the LaAlO3/SrTiO3 system, because it features especially striking properties. High carrier mobility [1], electric field tuneable superconductivity [2] and magnetic effects [3], have been found. Here we show that an orbital reconstruction is underlying the generation of the electron gas at the LaAlO3/SrTiO3 n-type interface. Our results are based on extensive investigations of the electronic properties and of the orbital structure of the interface using X-ray Absorption Spectroscopy. In particular we find that the degeneracy of the Ti 3d states is fully removed, and that the Ti 3dxy levels become the first available states for conducting electrons.
We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO3/SrTiO3 heterostructures. Shubnikov-de Haas oscillations reveal several 2D conduction subbands with carrier effective masses between 1 and 3
m_e, quantum mobilities of order 3000 cm^2/V s, and band edges only a few millielectronvolts below the Fermi energy. Measurements in tilted magnetic fields confirm the 2D character of the electron gas, and show evidence of inter-subband scattering.
Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a 2DEG -the Sr
TiO3(110)-(4 x 1) surface, natively terminated with one monolayer of chemically-inert titania. Oxygen vacancies induced by synchrotron radiation migrate under- neath this overlayer, this leads to a confining potential and electron doping such that a 2DEG develops. Our angular resolved photoemission spectroscopy (ARPES) and theoretical results show that confinement along (110) is strikingly different from a (001) crystal orientation. In particular the quantized subbands show a surprising semi-heavy band, in contrast to the analogue in the bulk, and a high electronic anisotropy. This anisotropy and even the effective mass of the (110) 2DEG is tunable by doping, offering a high flexibility to engineer the properties of this system.
Based on the dimension of degeneracy, topological electronic systems can roughly be divided into three parts: nodal point, line and surface materials corresponding to zero-, one- and two-dimensional degeneracy, respectively. In parallel to electronic
systems, the concept of topology was extended to phonons, promoting the birth of topological phonons. Till date, few nodal point, line and surface phonons candidates have been predicted in solid-state materials. In this study, based on symmetry analysis and first-principles calculation, for the first time, we prove that zero-, one- and two-dimensional degeneracy co-exist in the phonon dispersion of one single realistic solid-state material SnO$_2$ with textit{P}4$_2$/textit{mnm} structure. In contrast to the previously reported electronic systems, the topological phonons observed in SnO$_2$ are not restricted by the Pauli exclusion principle, and they experience negligible spin-orbit coupling effect. Hence, SnO$_2$ with multiple dimensions of degeneracy phonons is a good platform for studying the entanglement among nodal point, line and surface phonons. Moreover, obvious phonon surface states are visible, which is beneficial for experimental detection.
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