اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSi CMOS Platform for Quantum Information Processing
76
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.
قيم البحث
اقرأ أيضاً
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called
qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.
We theoretically study single and two-qubit dynamics in the circuit QED architecture. We focus on the current experimental design [Wallraff et al., Nature 431, 162 (2004); Schuster et al., Nature 445, 515 (2007)] in which superconducting charge qubit
s are capacitively coupled to a single high-Q superconducting coplanar resonator. In this system, logical gates are realized by driving the resonator with microwave fields. Advantages of this architecture are that it allows for multi-qubit gates between non-nearest qubits and for the realization of gates in parallel, opening the possibility of fault-tolerant quantum computation with superconduting circuits. In this paper, we focus on one and two-qubit gates that do not require moving away from the charge-degeneracy `sweet spot. This is advantageous as it helps to increase the qubit dephasing time and does not require modification of the original circuit QED. However these gates can, in some cases, be slower than those that do not use this constraint. Five types of two-qubit gates are discussed, these include gates based on virtual photons, real excitation of the resonator and a gate based on the geometric phase. We also point out the importance of selection rules when working at the charge degeneracy point.
We suggest a new method of quantum information processing based on the precise placing of P-31 isotope atoms in a quasi-one-dimensional Si-28 nanowire using isotope engineering and neutron-transmutation doping of the grown structures. In our structur
e, interqubit entanglement is based on the indirect interaction of P-31 nuclear spins with electrons localized in a nanowire. This allows one to control the coupling between distant qubits and between qubits separated by non-qubit neighboring nodes. The suggested method enables one to fabricate structures using present-day nanolithography. Numerical estimates show the feasibility of the proposed device and method of operation.
Aluminium based platforms have allowed to reach major milestones for superconducting quantum circuits. For the next generation of devices, materials that are able to maintain low microwave losses while providing new functionalities, such as large kin
etic inductance or compatibility with CMOS platform are sought for. Here we report on a combined direct current (DC) and microwave investigation of titanium nitride lms of dierent thicknesses grown using CMOS compatible methods. For microwave resonators made of TiN lm of thickness $sim$3 nm, we measured large kinetic inductance LK $sim$ 240 pH/sq, high mode impedance of $sim$ 4.2 k$Omega$ while maintaining microwave quality factor $sim$ 10^5 in the single photon limit. We present an in-depth study of the microwave loss mechanisms in these devices that indicates the importance of quasiparticles and provide insights for further improvement.
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements
demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
