اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدVisualization of Ion Channels in Membranes using Electrochemical Strain Microscopy
113
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Polymer composite electrolytes of Nafion and phosphotungstic acid (PWA) are fabricated and analyzed using electrochemical strain microscopy (ESM) and conductive atomic force microscopy (C-AFM) to visualize hydrophilic ion channels near the surface, which are composed of water and sulfonic acid groups. The results indicate that the fibrillar objects in ESM image, without significant changes in topography, are hydrophilic ion channels and additional ion channels formed by interaction between PWA and sulfonic groups in Nafion. In this study, the buried ion channels lying under the surface are probed as well as the inlet and outlet of the channels on the surface through combined use of ESM and C-AFM. The results further enhance the understanding of ionic conduction in composite polymer electrolytes in various fields.
قيم البحث
اقرأ أيضاً
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel prop
erties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
We report quantitative measurements of nanoscale permittivity and conductivity using tuning-fork (TF) based microwave impedance microscopy (MIM). The system is operated under the driving amplitude modulation mode, which ensures satisfactory feedback
stability on samples with rough surfaces. The demodulated MIM signals on a series of bulk dielectrics are in good agreement with results simulated by finite-element analysis. Using the TF-MIM, we have visualized the evolution of nanoscale conductance on back-gated $MoS_2$ field effect transistors and the results are consistent with the transport data. Our work suggests that quantitative analysis of mesoscopic electrical properties can be achieved by near-field microwave imaging with small distance modulation.
Many promising applications of single crystal diamond and its color centers as sensor platform and in photonics require free-standing membranes with a thickness ranging from several micrometers to the few 100 nm range. In this work, we present an app
roach to conveniently fabricate such thin membranes with up to about one millimeter in size. We use commercially available diamond plates (thickness 50 $mu$m) in an inductively coupled reactive ion etching process which is based on argon, oxygen and SF$_6$. We thus avoid using toxic, corrosive feed gases and add an alternative to previously presented recipes involving chlorine-based etching steps. Our membranes are smooth (RMS roughness <1 nm) and show moderate thickness variation (central part: <1 $mu$m over $approx ,$200x200 $mu$m$^2$). Due to an improved etch mask geometry, our membranes stay reliably attached to the diamond plate in our chlorine-based as well as SF$_6$-based processes. Our results thus open the route towards higher reliability in diamond device fabrication and up-scaling.
The control of optically driven high-frequency strain waves in nanostructured systems is an essential ingredient for the further development of nanophononics. However, broadly applicable experimental means to quantitatively map such structural distor
tion on their intrinsic ultrafast time and nanometer length scales are still lacking. Here, we introduce ultrafast convergent beam electron diffraction (U-CBED) with a nanoscale probe beam for the quantitative retrieval of the time-dependent local distortion tensor. We demonstrate its capabilities by investigating the ultrafast acoustic deformations close to the edge of a single-crystalline graphite membrane. Tracking the structural distortion with a 28-nm/700-fs spatio-temporal resolution, we observe an acoustic membrane breathing mode with spatially modulated amplitude, governed by the optical near field structure at the membrane edge. Furthermore, an in-plane polarized acoustic shock wave is launched at the membrane edge, which triggers secondary acoustic shear waves with a pronounced spatio-temporal dependency. The experimental findings are compared to numerical acoustic wave simulations in the continuous medium limit, highlighting the importance of microscopic dissipation mechanisms and ballistic transport channels.
Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would be more eff
ective than uniaxial strain to tune the band structure of MoS2, a direct experimental verification is still missing in the literature. Here we implemented a simple experimental setup that allows to apply biaxial strain through the bending of a cruciform polymer substrate. We used the setup to study the effect of biaxial strain on the differential reflectance spectra of 12 single-layer MoS2 flakes finding a redshift of the excitonic features at a rate between -40 meV/% and -110 meV/% of biaxial tension. We also directly compare the effect of biaxial and uniaxial strain on the same single-layer MoS2 finding that the biaxial strain gauge factor is 2.3 times larger than the uniaxial strain one.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
