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Two-dimensional (2D) perovskites or Ruddleson Popper (RP) perovskites have emerged as a class of material inheriting the superior optoelectronic properties of two different materials: perovskites and 2D materials. The large exciton binding energy and natural quantum well structure of 2D perovskite not only make these materials ideal platforms to study light-matter interactions, but also render them suitable for fabrication of various functional optoelectronic devices. Nanoscale structuring and morphology control have led to semiconductors with enhanced functionalities. For example, nanowires of semiconducting materials have been extensively used for important applications like lasing and sensing. Catalyst-assisted Vapor Liquid Solid (VLS) techniques, and template assisted growth, have conventionally been used for nanowire growth. However, catalyst and template-free scalable growth with morphology control of 2D perovskites have remained elusive. In this manuscript, we demonstrate a facile approach for morphology-controlled growth of high-quality nanowires of 2D perovskite, (BA)2PbI4. We demonstrate that the photoluminescence (PL) from the nanowires are highly polarized with a polarization ratio as large as ~ 0.73, which is one of the largest reported for perovskites. We further show that the photocurrent from the device based on the nanowire/graphene heterostructure is also sensitive to the polarization of the incident light with the photocurrent anisotropy ratio of ~3.62 (much larger than the previously reported best value of 2.68 for perovskite nanowires), thus demonstrating the potential of these nanowires as highly efficient photodetectors of polarized light.
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method based on co
The basis for superconducting electronics can broadly be divided between two technologies: the Josephson junction and the superconducting nanowire. While the Josephson junction (JJ) remains the dominant technology due to its high speed and low power
Two-dimensional (2D) organic-inorganic perovskites have recently attracted increasing attention due to their great environmental stability, remarkable quantum confinement effect and layered characteristic. Heterostructures consisting of 2D layered pe
Perovskite-based optoelectronic devices have gained significant attention due to their remarkable performance and low processing cost, particularly for solar cells. However, for perovskite light-emitting diodes (LEDs), non-radiative charge carrier re
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temp