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Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3${omega}$ method, finding it ranges from 674 ${pm}$ 56 W/m/K at 100 K to 186 ${pm}$ 7 W/m/K at 400 K, with a value of 237 ${pm}$ 6 W/m/K at room temperature. We compare these data with analytical models and first principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths, over ~7 ${mu}$m at room temperature, and 50% by phonons with MFPs over ~0.3 ${mu}$m. Consequently, the effective thermal conductivity of AlN is strongly reduced in sub-micron thin films or devices due to phonon-boundary scattering.
It is textbookly regarded that phonons, i.e., an energy quantum of propagating lattice waves, are the main heat carriers in perfect crystals. As a result, in many crystals, e.g., bulk silicon, the temperature-dependent thermal conductivity shows the
Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building-blocks of state-of-the-art devices employed for active cooling and energy-saving lightning. Insights into the heat conduction of these structures are essential
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. A
This work studies the influence of microstructures and crystalline defects on the superconductivity of MgB2, with the objective to improve its flux pinning. A MgB2 sample pellet that was hot isostatic pressed (HIPed) was found to have significantly i
The high breakdown current densities and resilience to scaling of the metallic transition metal trichalcogenides TaSe3 and ZrTe3 make them of interest for possible interconnect applications, and it motivates this study of their thermal conductivities