ترغب بنشر مسار تعليمي؟ اضغط هنا

Gate-controlled phase switching in a Parametron

59   0   0.0 ( 0 )
 نشر من قبل Alexander Eichler
 تاريخ النشر 2019
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The parametron, a resonator-based logic device, is a promising physical platform for emerging computational paradigms. When the parametron is subject to both parametric pumping and external driving, complex phenomena arise that can be harvested for applications. In this paper, we experimentally demonstrate deterministic phase switching of a parametron by applying frequency tuning pulses. To our surprise, we find different regimes of phase switching due to the interplay between a parametric pump and an external drive. We provide full modeling of our device with numerical simulations and find excellent agreement between model and measurements. Our result opens up new possibilities for fast and robust logic operations within large-scale parametron architectures.

قيم البحث

اقرأ أيضاً

In a standard Josephson junction the current is zero when the phase difference between the superconducting leads is zero. This condition is protected by parity and time-reversal symmetries. However, the combined presence of spin-orbit coupling and ma gnetic field breaks these symmetries and can lead to a finite supercurrent even when the phase difference is zero. This is the so called anomalous Josephson effect -- the hallmark effect of superconducting spintronics --and can be characterized by the corresponding anomalous phase shift ($phi_0$). We report the observation of a tunable anomalous Josephson effect in InAs/Al Josephson junctions measured via a superconducting quantum interference device (SQUID). By gate controlling the density of InAs we are able to tune the spin-orbit coupling of the Josephson junction by more than one order of magnitude. This gives us the ability to tune $phi_0$, and opens several new opportunities for superconducting spintronics, and new possibilities for realizing and characterizing topological superconductivity.
Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create electronic a nalogs of optical devices having both positive and negative indices of refraction. Here, we use gate-controlled density with both p and n carrier types to demonstrate the analog of the fiber-optic guiding in graphene. Two basic effects are investigated: (1) bipolar p-n junction guiding, based on the principle of angle-selective transmission though the graphene p-n interface, and (2) unipolar fiber-optic guiding, using total internal reflection controlled by carrier density. Modulation of guiding efficiency through gating is demonstrated and compared to numerical simulations, which indicates that interface roughness limits guiding performance, with few-nanometer effective roughness extracted. The development of p-n and fiber-optic guiding in graphene may lead to electrically reconfigurable wiring in high-mobility devices.
Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically a nd optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.
The optical response of a heavily doped quantum well, with two occupied subbands, has been investigated as a function of the electronic density. It is shown that the two optically active transitions are mutually coupled by dipole-dipole Coulomb inter action, which strongly renormalizes their absorption amplitude. In order to demonstrate this effect, we have measured a set of optical spectra on a device in which the electronic density can be tuned by the application of a gate voltage. Our results show that the absorption spectra can be correctly described only by taking into account the Coulomb coupling between the two transitions. As a consequence, the optical dipoles originating from intersubband transitions are not independent, but rather coupled oscillators with an adjustable strength.
59 - L. Liang , J. Shan , Q. H. Chen 2018
We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا