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We review recent precision measurements on semiconductor tunable-barrier electron pumps operating in a ratchet mode. Seven studies on five different designs of pumps have reported measurements of the pump current with relative total uncertainties around $10^{-6}$ or less. Combined with theoretical models of electron capture by the pumps, these experimental data exhibits encouraging evidence that the pumps operate according to a universal mechanism, independent of the details of device design. Evidence for robustness of the pump current against changes in the control parameters is at a more preliminary stage, but also encouraging, with two studies reporting robustness of the pump current against three or more parameters in the range of $sim!5 times 10^{-7}$ to $sim!2 times 10^{-6}$. This review highlights the need for an agreed protocol for tuning the electron pump for optimal operation, as well as more rigorous evaluations of the robustness in a wide range of pump designs.
We demonstrate the robust operation of a gallium arsenide tunable-barrier single-electron pump operating with 1 part-per-million accuracy at a temperature of $1.3$~K and a pumping frequency of $500$~MHz. The accuracy of current quantisation is invest
Single electron sources have been studied as a device to establish an electric current standard for 30 years and recently as an on-demand coherent source for Fermion quantum optics. In order to construct the single electron source on a GaAs/AlGaAs tw
We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measu
Recently nanomechanical devices composed of a long stationary inner carbon nanotube and a shorter, slowly-rotating outer tube have been fabricated. In this Letter, we study the possibility of using such devices as adiabatic quantum pumps. Using the B
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lat